OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IRF6216TRPBF

P1-P3P4-P6P7-P8
IRF6216PbF
4 www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
1 10 100 1000
-V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 5 10 15 20 25 30 35
0
2
4
6
8
10
12
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I
=
D
-1.3A
V = -30V
DS
V = -75V
DS
V = -120V
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
1 10 100 1000
-V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
IRF6216PbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100 1000
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
V
DS
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
IRF6216PbF
6 www.irf.com
Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 15
0
0
100
200
300
400
500
Starting Tj, Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
AS
°
I
D
TOP
BOTTOM
-1.8A
-3.2A
-4.0A
4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0
-V
GS,
Gate -to -Source Voltage (V)
0.00
0.50
1.00
1.50
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
I
D
= -2.2A
V
GS
= -10V
0 2 4 6 8 10 12 14 16 18
0.19
0.20
0.21
0.22
0.23
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
D.U.T.
V
D
S
I
D
I
G
-3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-V
GS
Q
G
Q
GS
Q
GD
V
G
Charge
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
t
p
V
(BR)DSS
I
AS
P1-P3P4-P6P7-P8

IRF6216TRPBF

Mfr. #:
Buy IRF6216TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT PCh -150V -2.2A 240mOhm 33nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet