Table 14: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision D)
Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
856 776 696 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRE-
CHARGE
I
DD1
1
936 896 856 mA
Precharge power-down current: Slow exit I
DD2P0
2
192 192 192 mA
Precharge power-down current: Fast exit I
DD2P1
2
560 480 400 mA
Precharge quiet standby current I
DD2Q
2
640 560 480 mA
Precharge standby current I
DD2N
2
672 592 512 mA
Precharge standby ODT current I
DD2NT
1
496 456 416 mA
Active power-down current I
DD3P
2
640 560 480 mA
Active standby current I
DD3N
2
720 640 560 mA
Burst read operating current I
DD4R
1
1536 1376 1216 mA
Burst write operating current I
DD4W
1
1576 1416 1256 mA
Refresh current I
DD5B
1
1816 1696 1616 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
192 192 192 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
240 240 240 mA
All banks interleaved read current I
DD7
1
3576 3176 2776 mA
Reset current I
DD8
2
224 224 224 mA
Notes:
1. One module rank in the active I
DD
; the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
2GB, 4GB, 8GB (x64, DR) 204-Pin DDR3 SODIMM
I
DD
Specifications
PDF: 09005aef84415efe
jtf16c256_512_1gx64hz.pdf - Rev. H 5/13 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
