CY62158EV30LL-45ZSXIT

CY62158EV30 MoBL
®
Document Number: 38-05578 Rev. *J Page 16 of 18
Document History Page
Document Title: CY62158EV30 MoBL
®
, 8-Mbit (1024 K × 8) Static RAM
Document Number: 38-05578
Rev. ECN No. Issue Date
Orig. of
Change
Description of Change
** 270329 See ECN PCI New data sheet.
*A 291271 See ECN SYT Converted from Advance Information to Preliminary
Changed I
CCDR
from 4 to 4.5 A
*B 444306 See ECN NXR Converted from Preliminary to Final.
Removed 35 ns speed bin
Removed “L” bin.
Removed 44 pin TSOP II package
Included 48 pin TSOP I package
Changed the I
CC
Typ value from 16 mA to 18 mA and I
CC
max value from 28 mA
to 25 mA for test condition f = fax = 1/t
RC.
Changed the I
CC
max value from 2.3 mA to 3 mA for test condition f = 1MHz.
Changed the I
SB1
and
I
SB2
max value from 4.5 A to 8 A and Typ value from 0.9
A to 2 A respectively.
Updated Thermal Resistance table
Changed Test Load Capacitance from 50 pF to 30 pF.
Added Typ value for I
CCDR .
Changed the I
CCDR
max value from 4.5 A to 5 A
Corrected t
R
in Data Retention Characteristics from 100 s to t
RC
ns
Changed t
LZOE
from 3 to 5
Changed t
LZCE
from 6 to 10
Changed t
HZCE
from 22 to 18
Changed t
PWE
from 30 to 35
Changed t
SD
from 22 to 25
Changed t
LZWE
from 6 to 10
Updated the ordering Information and replaced the Package Name column with
Package Diagram.
*C 467052 See ECN NXR Included 44 pin TSOP II package in Product Offering.
Removed TSOP I package; Added reference to CY62157EV30 TSOP I
Updated the ordering Information table
*D 1015643 See ECN VKN Added footnote #8 related to I
SB2
and I
CCDR
*E 2934396 06/03/10 VKN Added footnote #21 related to chip enable
Updated package diagrams
Updated template
*F 3110202 12/14/2010 PRAS Updated Logic Block Diagram and Package Diagram.
Added Ordering Code Definitions.
*G 3269641 05/30/2011 RAME Updated Features.
Removed the note “For best practice recommendations, refer to the Cypress
application note “System Design Guidelines” at http://www.cypress.com.” and its
reference in Functional Description.
Updated Data Retention Characteristics.
Added Acronyms and Units of Measure.
Updated in new template.
*H 3598409 04/24/2012 TAVA Updated Package Diagram 51-85150 (from Rev *F to *G) and 51-85087 (from
Rev *C to *D).
*I 4100078 08/20/2013 VINI Updated Switching Characteristics:
Added Note 13 and referred the same note in “Parameter” column.
Updated Package Diagrams:
spec 51-85150 – Changed revision from *G to *H.
spec 51-85087 – Changed revision from *D to *E.
Updated in new template.
CY62158EV30 MoBL
®
Document Number: 38-05578 Rev. *J Page 17 of 18
*J 4576526 11/21/2014 VINI Added related documentation hyperlink in page 1.
Added Note 18 in Switching Characteristics.
Added note reference 18 in the Switching Characteristics table.
Added Note 28 in Switching Waveforms.
Added note reference 28 in Figure 9.
Document History Page (continued)
Document Title: CY62158EV30 MoBL
®
, 8-Mbit (1024 K × 8) Static RAM
Document Number: 38-05578
Rev. ECN No. Issue Date
Orig. of
Change
Description of Change
Document Number: 38-05578 Rev. *J Revised November 28, 2014 Page 18 of 18
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CY62158EV30 MoBL
®
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CY62158EV30LL-45ZSXIT

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 8Mb 3V 45ns 1024K x 8 LP SRAM
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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