CY62158EV30 MoBL
®
Document Number: 38-05578 Rev. *J Page 4 of 18
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature ............................... –65 °C to +150 °C
Ambient Temperature with
Power Applied .......................................... –55 °C to +125 °C
Supply Voltage to
Ground Potential ..........................–0.3 V to V
CC(max)
+ 0.3 V
DC Voltage Applied to Outputs
in High Z State
[3, 4]
.................... –0.3 V to V
CC(max)
+ 0.3 V
DC Input Voltage
[3, 4]
................. –0.3 V to V
CC(max)
+ 0.3 V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage
(MIL-STD-883, Method 3015) .................................> 2001 V
Latch up Current ....................................................> 200 mA
Operating Range
Product Range
Ambient
Temperature
(T
A
)
V
CC
[5]
CY62158EV30LL Industrial –40 °C to +85 °C 2.2 V–3.6 V
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions
45 ns
Unit
Min Typ
[6]
Max
V
OH
Output HIGH voltage I
OH
= –0.1 mA 2.0 – – V
I
OH
= –1.0 mA, V
CC
> 2.70 V 2.4 – – V
V
OL
Output LOW voltage I
OL
= 0.1 mA – – 0.4 V
I
OL
= 2.1 mA, V
CC
> 2.70 V – – 0.4 V
V
IH
Input HIGH voltage V
CC
= 2.2 V to 2.7 V 1.8 – V
CC
+ 0.3 V V
V
CC
= 2.7 V to 3.6 V 2.2 – V
CC
+ 0.3 V V
V
IIL
Input LOW voltage V
CC
= 2.2 V to 2.7 V –0.3 – 0.6 V
V
CC
= 2.7 V to 3.6 V –0.3 – 0.8 V
I
IX
Input leakage current GND < V
I
< V
CC
–1 – +1 A
I
OZ
Output leakage current GND < V
O
< V
CC
, Output Disabled –1 – +1 A
I
CC
V
CC
operating supply current f = f
max
= 1/t
RC
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
–1825mA
f = 1 MHz – 1.8 3 mA
I
SB1
Automatic CE power down
current — CMOS Inputs
CE
1
> V
CC
– 0.2 V, CE
2
< 0.2 V,
V
IN
> V
CC
– 0.2 V, V
IN
< 0.2 V,
f = f
max
(Address and Data Only),
f = 0 (
OE and WE), V
CC
= 3.60 V
–28A
I
SB2
[7]
Automatic CE Power down
Current — CMOS inputs
CE
1
> V
CC
– 0.2 V or CE
2
< 0.2 V,
V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V,
f = 0, V
CC
= 3.60 V
–28A
Notes
3. V
IL(min)
= –2.0 V for pulse durations less than 20 ns.
4. V
IH(max)
= V
CC
+ 0.75 V for pulse duration less than 20 ns.
5. Full device AC operation assumes a 100 s ramp time from 0 to V
CC
(min) and 200 s wait time after V
CC
stabilization.
6. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
7. Chip enables (
CE
1
and CE
2
) must be at CMOS level to meet the I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
