Automotive PSoC
®
4: PSoC
4000 Family Datasheet
Document Number: 001-92145 Rev. *E Page 10 of 31
Electrical Specifications
Absolute Maximum Ratings
Table 2. Absolute Maximum Ratings
[1]
Spec ID# Parameter Description Min Typ Max Units
Details/
Conditions
SID1 V
DDD_ABS
Digital supply relative to V
SS
–0.5 – 6 V
SID2 V
CCD_ABS
Direct digital core voltage input relative
to V
SS
–0.5 – 1.95 V
SID3 V
GPIO_ABS
GPIO voltage –0.5 V
DD
+0.5 V
SID4 I
GPIO_ABS
Maximum current per GPIO –25 25 mA
SID5 I
GPIO_injection
GPIO injection current, Max for V
IH
>
V
DDD
, and Min for V
IL
< V
SS
–0.5 0.5 mA Current injected
per pin
BID44 ESD_HBM Electrostatic discharge human body
model
2200 V
BID45 ESD_CDM Electrostatic discharge charged device
model
500 V
BID46 LU Pin current for latch-up –140 140 mA
Note
1. Usage above the absolute maximum conditions listed in Table 1 may cause permanent damage to the device. Exposure to Absolute Maximum conditions for extended
periods of time may affect device reliability. The Maximum Storage Temperature is 150 °C in compliance with JEDEC Standard JESD22-A103, High Temperature
Storage Life. When used below Absolute Maximum conditions but above normal operating conditions, the device may not operate to specification.
Automotive PSoC
®
4: PSoC
4000 Family Datasheet
Document Number: 001-92145 Rev. *E Page 11 of 31
Device Level Specifications
All specifications are valid for –40 °C T
A
85 °C for A grade devices and –40 °C T
A
105 °C for S grade devices, except where
noted. Specifications are valid for 1.71 V to 5.5 V, except where noted.
Table 3. DC Specifications
Typical values measured at V
DD
= 3.3 V and 25 °C.
Spec ID# Parameter Description Min Typ Max
[2]
Units
Details/
Conditions
SID53 V
DD
Power supply input voltage 1.8 5.5 V With regulator
enabled
SID255 V
DD
Power supply input voltage (V
CCD
=
V
DD
)
1.71 1.89 V Internally
unregulated
supply
SID54 V
DDIO
V
DDIO
domain supply 1.71 V
DD
V
SID55 C
EFC
External regulator voltage bypass 0.1 µF X5R ceramic or
better
SID56 C
EXC
Power supply bypass capacitor 1 µF X5R ceramic or
better
Active Mode, V
DD
= 1.8 to 5.5 V
SID9 I
DD5
Execute from flash; CPU at 6 MHz 2.0 2.85 mA
SID12 I
DD8
Execute from flash; CPU at 12 MHz 3.2 3.75 mA
SID16 I
DD11
Execute from flash; CPU at 16 MHz 4.0 4.5 mA
Sleep Mode, V
DDD
= 1.71 to 5.5 V
SID25 I
DD20
I
2
C wakeup, WDT on. 6 MHz 1.1 mA
SID25A I
DD20A
I
2
C wakeup, WDT on. 12 MHz 1.4 mA
Deep Sleep Mode, V
DD
= 1.8 to 3.6 V (Regulator on)
SID31 I
DD26
I
2
C wakeup and WDT on 2.5 8.2 µA
Deep Sleep Mode, V
DD
= 3.6 to 5.5 V (Regulator on)
SID34 I
DD29
I
2
C wakeup and WDT on 2.5 12 µA
Deep Sleep Mode, V
DD
= V
CCD
= 1.71 to 1.89 V (Regulator bypassed)
SID37 I
DD32
I
2
C wakeup and WDT on 2.5 9.2 µA
XRES Current
SID307 I
DD_XR
Supply current while XRES asserted 2 5 mA
Note
2. Maximum values corresponds to values at higher temperature (105 °C).
Automotive PSoC
®
4: PSoC
4000 Family Datasheet
Document Number: 001-92145 Rev. *E Page 12 of 31
GPIO
Table 4. AC Specifications
Spec ID# Parameter Description Min Typ Max Units
Details/
Conditions
SID48 F
CPU
CPU frequency DC 16 MHz 1.71 V
DD
5.5
SID49
[3]
T
SLEEP
Wakeup from Sleep mode 0 µs
SID50
[3]
T
DEEPSLEEP
Wakeup from Deep Sleep mode 35 µs
Table 5. GPIO DC Specifications
Spec ID# Parameter Description Min Typ Max Units
Details/
Conditions
SID57 V
IH
[4]
Input voltage high threshold 0.7 ×
V
DDD
V CMOS Input
SID58 V
IL
Input voltage low threshold 0.3 ×
V
DDD
V CMOS Input
SID241 V
IH
[4]
LVTTL input, V
DDD
< 2.7 V 0.7×
V
DDD
–– V
SID242 V
IL
LVTTL input, V
DDD
< 2.7 V 0.3 ×
V
DDD
V
SID243 V
IH
[4]
LVTTL input, V
DDD
2.7 V 2.0 V
SID244 V
IL
LVTTL input, V
DDD
2.7 V 0.8 V
SID59 V
OH
Output voltage high level V
DDD
–0.6
–– VI
OH
= 4 mA at
3V V
DDD
SID60 V
OH
Output voltage high level V
DDD
–0.5
–– VI
OH
= 1 mA at
1.8 V V
DDD
SID61 V
OL
Output voltage low level 0.6 V I
OL
= 4 mA at
1.8 V V
DDD
SID62 V
OL
Output voltage low level 0.6 V I
OL
= 10 mA at
3V V
DDD
SID62A V
OL
Output voltage low level 0.4 V I
OL
= 3mA at 3V
V
DDD
SID63 R
PULLUP
Pull-up resistor 3.5 5.6 8.5 k
SID64 R
PULLDOWN
Pull-down resistor 3.5 5.6 8.5 k
SID65 I
IL
Input leakage current (absolute value) 2 nA 25 °C, V
DDD
=
3.0 V
SID66 C
IN
Input capacitance 3 7 pF
SID67
[5]
V
HYSTTL
Input hysteresis LVTTL 15 40 mV V
DDD
2.7 V
SID68
[5]
V
HYSCMOS
Input hysteresis CMOS 0.05 ×
V
DDD
––mVV
DD
< 4.5 V
SID68A
[5]
V
HYSCMOS5V5
Input hysteresis CMOS 200 mV V
DD
> 4.5 V
SID69
[5]
I
DIODE
Current through protection diode to
V
DD
/V
SS
––100µA
SID69A
[5]
I
TOT_GPIO
Maximum total source or sink chip
current
––85mA
Notes
3. Guaranteed by characterization.
4. V
IH
must not exceed V
DDD
+ 0.2 V.
5. Guaranteed by characterization.

CY8C4014SXS-421T

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
ARM Microcontrollers - MCU PSoC4
Lifecycle:
New from this manufacturer.
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