IS64LV25616AL-12BLA3-TR

4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
07/05/06
IS64LV25616AL ISSI
®
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Options Min. Max. Unit
VOH Output HIGH Voltage VDD = Min., IOH = –4.0 mA 2.4 V
VOL Output LOW Voltage VDD = Min., IOL = 8.0 mA 0.4 V
VIH Input HIGH Voltage 2.0 VDD + 0.3 V
VIL Input LOW Voltage
(1)
-0.3 0.8 V
ILI Input Leakage GND VIN VDD A1 -2 2 µA
A2 -5 5
A3 -10 10
ILO Output Leakage GND VOUT VDD,A1-22µA
Outputs Disabled A2 -5 5
A3 -10 10
Notes:
1. VIL (min.) = –2.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
VTERM Terminal Voltage with Respect to GND –0.5 to VDD+0.5 V
VDD VDD Related to GND –0.3 to +4.0 V
TSTG Storage Temperature –65 to +150 °C
PT Power Dissipation 1.0 W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
OPERATING RANGE
Options Ambient Temperature VDD
A1 –40°C to +85°C 3.3V +10%, -5%
A2 –40°C to +105°C 3.3V +10%, -5%
A3 –40°C to +125°C 3.3V +10%, -5%
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
5
Rev. D
07/05/06
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IS64LV25616AL ISSI
®
CAPACITANCE
(1)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 6 pF
COUT Input/Output Capacitance VOUT = 0V 8 pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-10 -12
Symbol Parameter Test Conditions Options Min. Max. Min. Max. Unit
I
CC VDD Dynamic Operating VDD = Max., A1 100 mA
Supply Current IOUT = 0 mA, f = fMAX A2 110
A3 120
ISB TTL Standby Current VDD = Max., A1 50 mA
(TTL Inputs) VIN = VIH or VIL A2 55
CE VIH, f = fMAX.A360
ISB1 TTL Standby Current VDD = Max., A1 20 mA
(TTL Inputs) VIN = VIH or VIL A2 30
CE VIH, f = 0 A3 40
ISB2 CMOS Standby VDD = Max., A1 15 mA
Current (CMOS Inputs) CE VDD – 0.2V, A2 25
VIN VDD – 0.2V, or A3 35
VIN 0.2V, f = 0 typ
(2)
—5 —5
Note:
1. At f = f
MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. Shaded area product
in development
2. Typical values are measured at V
DD = 3.3V, TA = 25
o
C and not 100% tested.
6
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
07/05/06
IS64LV25616AL ISSI
®
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-10 -12
Symbol Parameter Min. Max. Min. Max. Unit
tRC Read Cycle Time 10 12 ns
tAA Address Access Time 10 12 ns
tOHA Output Hold Time 2 2 ns
tACE CE Access Time 10 12 ns
tDOE OE Access Time 4 5 ns
tHZOE
(2)
OE to High-Z Output 4 5 ns
tLZOE
(2)
OE to Low-Z Output 0 0 ns
tHZCE
(2
CE to High-Z Output 0 4 0 6 ns
tLZCE
(2)
CE to Low-Z Output 3 3 ns
tBA LB, UB Access Time 4 5 ns
tHZB
(2)
LB, UB to High-Z Output 0 3 0 4 ns
tLZB
(2)
LB, UB to Low-Z Output 0 0 ns
tPU Power Up Time 0 0 ns
tPD Power Down Time 10 12 ns
AC TEST CONDITIONS
Parameter Unit
Input Pulse Level 0V to 3.0V
Input Rise and Fall Times 3 ns
Input and Output Timing and Reference Level 1.5V
Output Load See Figures 1 and 2
AC TEST LOADS
Figure 1 Figure 2
319 Ω
5 pF
Including
jig and
scope
353 Ω
OUTPUT
3.3V
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V
and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage.
319 Ω
30 pF
Including
jig and
scope
353 Ω
OUTPUT
3.3V

IS64LV25616AL-12BLA3-TR

Mfr. #:
Manufacturer:
ISSI
Description:
SRAM 4M (256Kx16) 12ns Async SRAM 3.3v
Lifecycle:
New from this manufacturer.
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