1
1-megabit
2.7-volt Only
Serial
DataFlash
®
AT45DB011
Recommend using
AT45DB011B for new
designs.
Features
Single 2.7V - 3.6V Supply
Serial Interface Architecture
Page Program Operation
Single Cycle Reprogram (Erase and Program)
512 Pages (264 Bytes/Page) Main Memory
Optional Page and Block Erase Operations
One 264-byte SRAM Data Buffer
Internal Program and Control Timer
Fast Page Program Time – 7 ms Typical
120 µs Typical Page to Buffer Transfer Time
Low Power Dissipation
4 mA Active Read Current Typical
2 µA CMOS Standby Current Typical
13 MHz Max Clock Frequency
Hardware Data Protection Feature
Serial Peripheral Interface (SPI) Compatible – Modes 0 and 3
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
Description
The AT45DB011 is a 2.7-volt only, serial interface Flash memory suitable for
in-system reprogramming. Its 1,081,344 bits of memory are organized as 512 pages
of 264 bytes each. In addition to the main memory, the AT45DB011 also contains one
SRAM data buffer of 264 bytes. Unlike conventional Flash memories that are
accessed randomly with multiple address lines and a parallel interface, the DataFlash
Rev. 1103E–01/01
Pin Configurations
Pin Name Function
CS
Chip Select
SCK Serial Clock
SI Serial Input
SO Serial Output
WP
Hardware Page
Write Protect Pin
RESET
Chip Reset
RDY/BUSY Ready/Busy
(continued)
TSSOP Top View
Type 1
1
2
3
4
5
6
7
14
13
12
11
10
9
8
RDY/BUSY
RESET
WP
VCC
GND
SCK
SO
CS
NC
NC
NC
NC
NC
SI
PLCC
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
SCK
SI
SO
NC
NC
NC
NC
NC
NC
WP
RESET
RDY/BUSY
NC
NC
NC
NC
NC
NC
4
3
2
1
32
31
30
14
15
16
17
18
19
20
NC
NC
DC
DC
NC
NC
NC
CS
NC
NC
GND
VCC
NC
NC
SOIC
1
2
3
4
8
7
6
5
SI
SCK
RESET
CS
SO
GND
VCC
WP
Note: PLCC package pins 16 and
17 are DONT CONNECT
AT45DB011
Preliminary 16-
Megabit 2.7-volt
Only Serial
DataFlash
AT45DB011
2
uses a serial interface to sequentially access its data. The
simple serial interface facilitates hardware layout,
increases system reliability, minimizes switching noise, and
reduces package size and active pin count. The device is
optimized for use in many commercial and industrial appli-
cations where high density, low pin count, low voltage, and
low power are essential. Typical applications for the
DataFlash are digital voice storage, image storage, and
data storage. The device operates at clock frequencies up
to 13 MHz with a typical active read current consumption of
4mA.
To allow for simple in-system reprogrammability, the
AT45DB011 does not require high input voltages for pro-
gramming. The device operates from a single power
supply, 2.7V to 3.6V, for both the program and read opera-
tions. The AT45DB011 is enabled through the chip select
pin (CS
) and accessed via a three-wire interface consisting
of the Serial Input (SI), Serial Output (SO), and the Serial
Clock (SCK).
All programming cycles are self-timed, and no separate
erase cycle is required before programming.
Block Diagram
Memory Array
To provide optimal flexibility, the memory array of the
AT45DB011 is divided into three levels of granularity com-
prising of sectors, blocks, and pages. The Memory
Architecture Diagram illustrates the breakdown of each
level and details the number of pages per sector and block.
All program operations to the DataFlash occur on a page
by page basis; however, the optional erase operations can
be performed at the block or page level.
FLASH MEMORY ARRAY
PAGE (264 BYTES)
BUFFER (264 BYTES)
I/O INTERFACE
SCK
CS
RESET
VCC
GND
RDY/BUSY
WP
SOSI
AT45DB011
3
Memory Architecture Diagram
Device Operation
The device operation is controlled by instructions from the
host processor. The list of instructions and their associated
opcodes are contained in Tables 1 and 2. A valid instruc-
tion starts with the falling edge of CS
followed by the
appropriate 8-bit opcode and the desired buffer or main
memory address location. While the CS
pin is low, toggling
the SCK pin controls the loading of the opcode and the
desired buffer or main memory address location through
the SI (serial input) pin. All instructions, addresses, and
data are transferred with the most significant bit (MSB) first.
Read
By specifying the appropriate opcode, data can be read
from the main memory or from the data buffer.
MAIN MEMORY PAGE READ: A main memory read allows
the user to read data directly from any one of the 512
pages in the main memory, bypassing the data buffer and
leaving the contents of the buffer unchanged. To start a
page read, the 8-bit opcode, 52H, is followed by 24
address bits and 32 dont care bits. In the AT45DB011, the
first six address bits are reserved for larger density devices
(see Notes on page 9), the next nine address bits (PA8-
PA0) specify the page address, and the next nine address
bits (BA8-BA0) specify the starting byte address within the
page. The 32 dont care bits which follow the 24 address
bits are sent to initialize the read operation. Following the
32 dont care bits, additional pulses on SCK result in serial
data being output on the SO (serial output) pin. The CS
pin
must remain low during the loading of the opcode, the
address bits, and the reading of data. When the end of a
page in main memory is reached during a main memory
page read, the device will continue reading at the beginning
of the same page. A low-to-high transition on the CS
pin
will terminate the read operation and tri-state the SO pin.
BUFFER READ: Data can be read from the data buffer
using an opcode of 54H. To perform a buffer read, the eight
bits of the opcode must be followed by 15 dont care bits,
nine address bits, and eight dont care bits. Since the buffer
size is 264-bytes, nine address bits (BFA8-BFA0) are
required to specify the first byte of data to be read from the
buffer. The CS
pin must remain low during the loading of
the opcode, the address bits, the dont care bits, and the
reading of data. When the end of the buffer is reached, the
device will continue reading back at the beginning of the
buffer. A low-to-high transition on the CS
pin will terminate
the read operation and tri-state the SO pin.
Block = 2112 bytes
(2K + 64)
8 Pages
BLOCK 0
BLOCK 1
BLOCK 2
BLOCK 62
BLOCK 63
BLOCK 61
Page = 264 bytes
(256 + 8)
PAGE 0
PAGE 1
PAGE 6
PAGE 7
PAGE 8
PAGE 9
PAGE 510
PAGE 511
BLOCK 0
PAGE 14
PAGE 15
PAGE 16
PAGE 17
PAGE 18
PAGE 509
BLOCK 1
BLOCK ARCHITECTURE PAGE ARCHITECTURE
SECTOR 0 = 2112 BYTES (2K + 64)
SECTOR 1 = 65,472 BYTES (62K + 1984)
SECTOR ARCHITECTURE
SECTOR 2 = 67,584 BYTES (64K + 2K)
BLOCK 3
BLOCK 29
BLOCK 30
BLOCK 31
BLOCK 32
BLOCK 33
BLOCK 34
SECTOR 1SECTOR 2
SECTOR 0

AT45DB011-JI

Mfr. #:
Manufacturer:
Description:
IC FLASH 1M SPI 15MHZ 32PLCC
Lifecycle:
New from this manufacturer.
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