SIHB25N50E-GE3 Datasheet SIHB25N50E-GE3 | P1-P3

SiHB25N50E

www.vishay.com

Vishay Siliconix

S15-0493-Rev. A, 16-Mar-15

1

Document Number: 91646

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

E Series Power MOSFET

FEATURES

• Low figure-of-merit (FOM): R

on

x Q

g

• Low input capacitance (C

iss

)

• Reduced switching and conduction losses

• Low gate charge (Q

g

)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATONS

• Hard switched topologies

• Power factor correction power supplies (PFC)

• Switch mode power supplies (SMPS)

•Computing

- PC silver box / ATX power supplies

• Lighting

- Two stage LED lighting

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V

DD

= 50 V, starting T

J

= 25 °C, L = 28.2 mH, R

g

= 25 Ω, I

AS

= 4.4 A.

c. 1.6 mm from case.

d. I

SD

≤ I

D

, dI/dt = 100 A/μs, starting T

J

= 25 °C.

PRODUCT SUMMARY

V

DS

(V) at T

J

max. 550

R

DS(on)

max. at 25 °C (Ω)V

GS

= 10 V 0.145

Q

g

(Max.) (nC) 86

Q

gs

(nC) 14

Q

gd

(nC) 25

Configuration Single

N-Channel MOSFET

G

D

S

D

2

PAK (TO-263)

G

D

S

ORDERING INFORMATION

Package D

2

PAK (TO-263)

Lead (Pb)-free and Halogen-free SiHB25N50E-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

500

V

Gate-Source Voltage V

GS

± 30

Continuous Drain Current (T

J

= 150 °C) V

GS

at 10 V

T

C

= 25 °C

I

D

26

AT

C

= 100 °C 16

Pulsed Drain Current

a

I

DM

50

Linear Derating Factor 0.2 W/°C

Single Pulse Avalanche Energy

b

E

AS

273 mJ

Maximum Power Dissipation P

D

250 W

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +150 °C

Drain-Source Voltage Slope V

DS

= 0 V to 80 % V

DS

dV/dt

65

V/ns

Reverse Diode dV/dt

d

25

Soldering Recommendations (Peak Temperature)

c

for 10 s 300 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

thJA

-62

°C/W

Maximum Junction-to-Case (Drain) R

thJC

-0.5

SiHB25N50E

www.vishay.com

Vishay Siliconix

S15-0493-Rev. A, 16-Mar-15

2

Document Number: 91646

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. C

oss(er)

is a fixed capacitance that gives the same energy as C

oss

while V

DS

is rising from 0 % to 80 % V

DSS

.

b. C

oss(tr)

is a fixed capacitance that gives the same charging time as C

oss

while V

DS

is rising from 0 % to 80 % V

DSS

.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 500 - - V

V

DS

Temperature Coefficient ΔV

DS

/T

J

Reference to 25 °C, I

D

= 1 mA - 0.59 - V/°C

Gate-Source Threshold Voltage (N) V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 2.0 - 4.0 V

Gate-Source Leakage I

GSS

V

GS

= ± 20 V - - ± 100 nA

V

GS

= ± 30 V - - ± 1 μA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 500 V, V

GS

= 0 V - - 1

μA

V

DS

= 400 V, V

GS

= 0 V, T

J

= 125 °C - - 25

Drain-Source On-State Resistance R

DS(on)

V

GS

= 10 V I

D

= 12 A - 0.125 0.145 Ω

Forward Transconductance g

fs

V

DS

= 30 V, I

D

= 12 A - 6.6 - S

Dynamic

Input Capacitance C

iss

V

GS

= 0 V,

V

DS

= 100 V,

f = 1 MHz

- 1980 -

pF

Output Capacitance C

oss

- 105 -

Reverse Transfer Capacitance C

rss

-8-

Effective Output Capacitance, Energy

C

o(er)

V

DS

= 0 V to 400 V, V

GS

= 0 V

- 105 -

Effective Output Capacitance, Time

C

o(tr)

- 285 -

Total Gate Charge Q

g

V

GS

= 10 V I

D

= 12 A, V

DS

= 400 V

-5786

nC Gate-Source Charge Q

gs

-14-

Gate-Drain Charge Q

gd

-25-

Turn-On Delay Time t

d(on)

V

DD

= 400 V, I

D

= 12 A

R

g

= 9.1 Ω, V

GS

= 10 V

-1938

ns

Rise Time t

r

-3672

Turn-Off Delay Time t

d(off)

-5786

Fall Time t

f

-2958

Gate Input Resistance R

g

f = 1 MHz, open drain - 0.56 - Ω

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

MOSFET symbol

showing the

integral reverse

p - n junction diode

--12

A

Pulsed Diode Forward Current I

SM

--50

Diode Forward Voltage V

SD

T

J

= 25 °C, I

S

= 16.5 A, V

GS

= 0 V - - 1.2 V

Reverse Recovery Time t

rr

T

J

= 25 °C, I

F

= I

S

,

dI/dt = 100 A/μs, V

R

= 25 V

- 338 - ns

Reverse Recovery Charge Q

rr

-5.3-μC

Reverse Recovery Current I

RRM

-29-A

S

D

G

SiHB25N50E

www.vishay.com

Vishay Siliconix

S15-0493-Rev. A, 16-Mar-15

3

Document Number: 91646

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - C

OSS

and E

OSS

vs. V

DS

0

10

20

30

40

50

60

70

0 5 10 15 20 25 30

I

D

, Drain-to-Source Current (A)

V

DS

, Drain-to-Source Voltage (V)

T

J

= 25 °C

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

7 V

6 V

BOTTOM 5 V

0

10

20

30

40

0 5 10 15 20 25 30

I

D

, Drain-to-Source Current (A)

V

DS

, Drain-to-Source Voltage (V)

T

J

= 150 °C

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

7 V

6 V

BOTTOM 5 V

0

10

20

30

40

50

60

70

0 5 10 15 20 25

I

D

, Drain-to-Source Current (A)

V

GS

, Gate-to-Source Voltage (V)

T

J

= 150 °C

T

J

= 25 °C

V

DS

= 28.6 V

0

0.5

1.0

1.5

2.0

2.5

3.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

R

DS(on)

, Drain-to-Source On-Resistance

(Normalized)

T

J

, Junction Temperature (°C)

I

D

= 12 A

V

GS

= 10 V

1

10

100

1000

10 000

0 100 200 300 400 500

C, Capacitance (pF)

V

DS

, Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

V

GS

= 0 V, f = 1 MHz

C

iss

= C

gs

+ C

gd

, C

ds

shorted

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

0

2

4

6

8

10

12

50

500

5000

0 100200300400500

E

oss

(μJ)

C

oss

(pF)

V

DS

C

oss

E

oss

SIHB25N50E-GE3

SIHB25N50E-GE3

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