©2014 Silicon Storage Technology, Inc. DS20005016C 11/14
25
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
EOL Data Sheet
Electrical Specifications
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Temperature Under Bias .............................................. -55°C to +125°C
Storage Temperature ................................................. -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential .............................-0.5V to V
DD
+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential ...................-2.0V to V
DD
+2.0V
Package Power Dissipation Capability (T
A
= 25°C) ................................... 1.0W
Surface Mount Solder Reflow Temperature ............................ 260°C for 10 seconds
Output Short Circuit Current
1
................................................... 50mA
1. Output shorted for no more than one second. No more than one output shorted at a time.
Table 13: Operating Range
Range Ambient Temp V
DD
Industrial -40°C to +85°C 1.65-1.95V
Industrial (extended)
1
1. Contact SST Sales for available extended industrial temperature devices.
-40°C to +105°C 1.70-1.90V
T13.1 20005016
Table 14: AC Conditions of Test
Input Rise/Fall Time Output Load
5ns C
L
=30pF
T14.1 20005016
©2014 Silicon Storage Technology, Inc. DS20005016C 11/14
26
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
EOL Data Sheet
Power-Up Specifications
All functionalities and DC specifications are specified for a V
DD
ramp rate of greater than 1V per 100
ms (0V to 1.8V in less than 180 ms). If the VDD ramp rate is slower than 1V/100 µs, a hardware reset
is required. The recommended V
DD
power-up to RESET# high time should be greater than 100 µs to
ensure a proper reset. See Table 15 and Figures 24 and 25 for more information.
Figure 24:Power-Up Reset Diagram
Table 15: Recommended System Power-up Timings
Symbol Parameter Minimum Units
T
PU-READ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
V
DD
Min to Read Operation 100 µs
T
PU-WRITE
1
V
DD
Min to Write Operation 100 µs
T15.0 20005016
1328 F37.1
V
DD
RESET#
CE#
T
PU-READ
V
DD
min
0V
V
IH
T
RECR
Note: See Table 2 on page 6 for T
RECR
parameter.
©2014 Silicon Storage Technology, Inc. DS20005016C 11/14
27
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
EOL Data Sheet
Figure 25:Power-up Timing Diagram
Time
V
DD
Min
V
DD
Max
V
DD
Device fully accessible
T
PU-READ
T
PU-WRITE
Chip selection is not allowed.
Commands may not be accepted or properly
interpreted by the device.
1326 F27.0

SST25WF040-40-5I-QAE-T

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 1.65 to 1.95V 4Mbit SPI Serial Flash
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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