©2014 Silicon Storage Technology, Inc. DS20005016C 11/14
28
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
EOL Data Sheet
DC Characteristics
Table 16: DC Operating Characteristics
Symbol Parameter
Limits
Test ConditionsMin Typ
1
1. Value characterized, not fully tested in production.
Max Units
I
DDR
Read Current 2 5 mA CE#=0.1 V
DD
/0.9 V
DD
@20 MHz,
SO=open
I
DDR2
Read Current 4 10 mA CE#=0.1 V
DD
/0.9V
DD
@40 MHz,
SO=open
I
DDW
Program and Erase Current 6 10 mA CE#=V
DD
I
SB
Standby Current 2 8 µA CE#=V
DD
,V
IN
=V
DD
or V
SS
I
LI
Input Leakage Current 1 µA V
IN
=GND to V
DD
,V
DD
=V
DD
Max
I
LO
Output Leakage Current 1 µA V
OUT
=GND to V
DD
,V
DD
=V
DD
Max
V
IL
Input Low Voltage 0.3 V V
DD
=V
DD
Min
V
IH
Input High Voltage 0.7 V
DD
VV
DD
=V
DD
Max
V
OL
Output Low Voltage 0.2 V I
OL
=100 µA, V
DD
=V
DD
Min
V
OH
Output High Voltage V
DD
-0.2 V I
OH
=-100 µA, V
DD
=V
DD
Min
T16.0 20005016
Table 17: Capacitance (T
A
= 25°C, f=1 Mhz, other pins open)
Parameter Description Test Condition Maximum
C
OUT
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Output Pin Capacitance V
OUT
=0V 12pF
C
IN
1
Input Capacitance V
IN
=0V 6pF
T17.0 20005016
Table 18: Reliability Characteristics
Symbol Parameter Minimum Specification Units Test Method
N
END
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Endurance 100,000 Cycles JEDEC Standard A117
T
DR
1
Data Retention 100 Years JEDEC Standard A103
I
LTH
1
Latch Up 100 + I
DD
mA JEDEC Standard 78
T18.0 20005016
©2014 Silicon Storage Technology, Inc. DS20005016C 11/14
29
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
EOL Data Sheet
AC Characteristics
Table 19: AC Operating Characteristics
Limits - 20 MHz Limits - 40 MHz
Symbol Parameter Min Max Min Max Units
F
CLK
1
1. Maximum clock frequency for Read instruction, 03H, is 20 MHz
Serial Clock Frequency 20 40 MHz
T
SCKH
Serial Clock High Time 20 11 ns
T
SCKL
Serial Clock Low Time 20 11 ns
T
SCKR
Serial Clock Rise Time 5 5 ns
T
SCKF
Serial Clock Fall Time 5 5 ns
T
CES
2
2. Relative to SCK
CE# Active Setup Time 20 8 ns
T
CEH
2
CE# Active Hold Time 20 8 ns
T
CHS
2
CE# Not Active Setup Time 10 10 ns
T
CHH
2
CE# Not Active Hold Time 10 10 ns
T
CPH
CE# High Time 50 25 ns
T
CHZ
CE# High to High-Z Output 20 19 ns
T
CLZ
SCK Low to Low-Z Output 0 0 ns
T
DS
Data In Setup Time 5 2 ns
T
DH
Data In Hold Time 5 5 ns
T
HLS
HOLD# Low Setup Time 10 8 ns
T
HHS
HOLD# High Setup Time 10 8 ns
T
HLH
HOLD# Low Hold Time 15 12 ns
T
HHH
HOLD# High Hold Time 10 10 ns
T
HZ
HOLD# Low to High-Z Output 20 20 ns
T
LZ
HOLD# High to Low-Z Output 20 20 ns
T
OH
Output Hold from SCK Change 0 0 ns
T
V
Output Valid from SCK 20 9 ns
T
SE
Sector-Erase 75 75 ms
T
BE
Block-Erase 75 75 ms
T
SCE
Chip-Erase 150 150 ms
T
BP
3
3. AAI-Word Program T
BP
maximum specification is also at 60 µs maximum time
Byte-Program 60 60 µs
T19.1 20005016
©2014 Silicon Storage Technology, Inc. DS20005016C 11/14
30
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
EOL Data Sheet
Figure 26:Serial Input Timing Diagram
Figure 27:Serial Output Timing Diagram
HIGH-Z
HIGH-Z
CE#
SO
SI
SCK
MSB
LSB
T
DS
T
DH
T
CHH
T
CES
T
CEH
T
CHS
T
SCKR
T
SCKF
T
CPH
1326 F24.0
1328 F25.0
CE#
SI
SO
SCK
MSB
T
CLZ
T
V
T
SCKH
T
CHZ
T
OH
T
SCKL
LSB

SST25WF040-40-5I-QAE-T

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 1.65 to 1.95V 4Mbit SPI Serial Flash
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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