PBSS5320D,125

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DATA SHEET
Product data sheet 2002 Jun 12
DISCRETE SEMICONDUCTORS
PBSS5320D
20 V low V
CEsat
PNP transistor
fpa
ge
MBD128
2002 Jun 12 2
NXP Semiconductors Product data sheet
20 V low V
CEsat
PNP transistor
PBSS5320D
FEATURES
Low collector-emitter saturation voltage
High current capability
Improved device reliability due to reduced heat
generation
APPLICATIONS
Supply line switching circuits
Battery management applications
DC/DC converter applications
Strobe flash units
Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
PNP low V
CEsat
transistor in a SOT457 (SC-74) plastic
package.
MARKING
TYPE NUMBER MARKING CODE
PBSS5320D 52
PINNING
PIN DESCRIPTION
1 collector
2 collector
3 base
4 emitter
5 collector
6 collector
MAM466
T
op view
1, 2, 5,
6
4
3
132
4
56
Fig.1 Simplified outline (SOT457; SC-74) and
symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 20 V
I
C
collector current (DC) 3 A
I
CM
peak collector current 5 A
R
CEsat
equivalent on-resistance 133 mΩ

PBSS5320D,125

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT Trans GP BJT PNP 20V 3A 6-Pin
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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