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PBSS5320D,125

P1-P3P4-P6P7-P8
2002 Jun 12 3
NXP Semiconductors Product data sheet
20 V low V
CEsat
PNP transistor
PBSS5320D
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm
2
.
2. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm
2
.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm
2
.
2. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm
2
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − −20 V
V
CEO
collector-emitter voltage open base − −20 V
V
EBO
emitter-base voltage open collector − −5 V
I
C
collector current (DC) − −3 A
I
CM
peak collector current − −5 A
I
B
base current − −500 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 600 mW
T
amb
≤ 25 °C; note 2 − 750 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
note 1 208 K/W
note 2 160 K/W
2002 Jun 12 4
NXP Semiconductors Product data sheet
20 V low V
CEsat
PNP transistor
PBSS5320D
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. MIN. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −20 V; I
E
= 0 − − −100 nA
V
CB
= −20 V; I
E
= 0; T
j
= 150 °C − − −50 μA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
= 0 − − −100 nA
h
FE
DC current gain V
CE
= −2 V; I
C
= −100 mA 200 − −
V
CE
= −2 V; I
C
= −500 mA 200 − −
V
CE
= −2 V; I
C
= −1 000 mA; note 1 200 − −
V
CE
= −2 V; I
C
= −2 000 mA; note 1 150 − −
V
CEsat
collector-emitter saturation
voltage
I
C
= −500 mA; I
B
= −5 mA − − −130 mV
I
C
= −500 mA; I
B
= −50 mA − − −80 mV
I
C
= −1 A; I
B
= −50 mA − − −160 mV
I
C
= −2 A; I
B
= −20 mA; note 1 − − −400 mV
I
C
= −2 A; I
B
= −200 mA; note 1 − − −250 mV
I
C
= −3 A; I
B
= −300 mA; note 1 − − −400 mV
R
CEsat
equivalent on-resistance I
C
= −3 A; I
B
= −300 mA; note 1 − 85 133 mΩ
V
BEsat
base-emitter saturation
voltage
I
C
= −2 A; I
B
= −200 mA; note 1 − − −1.2 V
V
BEon
base-emitter turn-on voltage V
CE
= −2 V; I
C
= −1 A; note 1 −1.2 − − V
C
c
collector capacitance V
CB
= −10 V; I
E
= I
e
= 0; f = 1 MHz − − 50 pF
F
T
transition frequency I
C
= −200 mA; V
CE
= −10 V;
f
= 100 MHz
100 − − MHz
2002 Jun 12 5
NXP Semiconductors Product data sheet
20 V low V
CEsat
PNP transistor
PBSS5320D
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
SOT457 SC-74
wBM
b
p
D
e
pin 1
index
A
A
1
L
p
Q
detail X
H
E
E
v M
A
AB
y
0 1 2 mm
scale
c
X
132
4
56
Plastic surface mounted package; 6 leads SOT45
7
UNIT
A
1
b
p
cD
E
H
E
L
p
Qywv
mm
0.1
0.013
0.40
0.25
3.1
2.7
0.26
0.10
1.7
1.3
e
0.95
3.0
2.5
0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2
0.33
0.23
A
1.1
0.9
97-02-28
01-05-04
P1-P3P4-P6P7-P8

PBSS5320D,125

Mfr. #:
Buy PBSS5320D,125
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT Trans GP BJT PNP 20V 3A 6-Pin
Lifecycle:
New from this manufacturer.
Delivery:
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