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UPA2375T1P-E1-A

P1-P3P4-P6P7-P9P10-P12
μ
PA2375T1P Chapter Title
R07DS0573EJ0100 Rev.1.00 Page 4 of 10
Dec 05, 2011
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
T
A
- Ambient Temperature - °C
P
T
- Total Power Dissipation - W
0
0.4
0.8
1.2
1.6
2
0 25 50 75 100 125 150 175
Mounted on ceramic board
of 50 cm
2
x 1.0 mmt
T
A
- Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
I
S
- Source Current - A
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
R
SS(on)
Limited
(V
GS
= 4.5 V)
Single Pulse
P(FET1) : P(FET2) = 1 : 1
Mounted on ceramic board of
50 cm
2
x 1.0 mmt
I
S(DC)
DC
P
W
=
3
0
0
μ
s
V
SS
- Source to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance - °C/W
0.01
0.1
1
10
100
1000
Mounted on ceramic board (50 cm
2
x 1.0 mmt)
Single pulse
PD( FET1 ) : PD( FET2) = 1 : 1
PW - Pulse Width- s
100
μ
1 m 10 m 100 m 1 10 100 1000
μ
PA2375T1P Chapter Title
R07DS0573EJ0100 Rev.1.00 Page 5 of 10
Dec 05, 2011
SOURCE CURRENT vs.
SOURCE TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
S
- Source Current - A
0
10
20
30
40
50
60
70
80
90
100
00.511.522.53
TEST CIRCUIT 5
Pulsed
2.5 V
3.1 V
V
GS
= 4.5 V
4.0 V
3.7 V
V
SS
- Source to Source Voltage - V
I
S
- Source Current - A
0.001
0.01
0.1
1
10
00.511.522.5
TEST CIRCUIT 3
V
SS
= 10 V
Pulsed
T
A
= 125°C
75°C
25°C
−
25°C
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
SOURCE CURRENT
V
GS (off)
- Gate to Source Cut-off Voltage - V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50 0 50 100 150
TEST CIRCUIT 3
V
SS
= 10 V
I
D
= 1.0 mA
T
ch
- Channel Temperature - °C
| y
fs
| - Forward Transfer Admittance - S
0.1
1
10
100
0.01 0.1 1 10
TEST
CIRCUIT 4
V
SS
= 5 V
Pulsed
T
A
= 125°C
75°C
25°C
−
25°C
I
S
- Source Current - A
SOURCE TO SOURCE ON-STATE RESISTANCE
vs. SOURCE CURRENT
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
SS(on)
- Source to Source On-state Resistance - mΩ
0
5
10
15
20
25
30
0.01 0.1 1 10 100
TEST CIRCUIT 5
Pulsed
4.0 V
V
GS
= 2.5 V
4.5 V
3.1 V
I
S
- Source Current - A
R
SS(on)
- Source to Source On-state Resistance - mΩ
0
5
10
15
20
25
30
0246810
TEST CIRCUIT 5
I
S
= 5.0 A
Pulsed
V
GS
- Gate to Source Voltage - V
μ
PA2375T1P Chapter Title
R07DS0573EJ0100 Rev.1.00 Page 6 of 10
Dec 05, 2011
SOURCE TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
CAPACITANCE vs. SOURCE TO SOURCE VOLTAGE
R
SS(on)
- Source to Source On-state Resistance - mΩ
0
5
10
15
20
25
30
-50 0 50 100 150
V
GS
= 2.5 V
3.1 V
TEST CIRCUIT 5
I
S
= 5.0 A
Puls e d
4.0 V
4.5 V
T
ch
- Channel Temperature - °C
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
100
1000
10000
0.1 1 10 100
TEST CIRCUIT 7
V
GS
= 0 V
f = 1.0 MHz
C
rss
C
iss
C
oss
V
SS
- Source to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time -
μ
s
1
10
100
1000
0.1 1 10
TEST CIRCUIT 8
V
DD
= 20 V
V
GS
= 4.0 V
R
G
= 6.0 Ω
t
d(on)
t
r
t
d(off)
t
f
I
S
- Source Current - A
V
GS
- Gate to Source Voltage - V
0
1
2
3
4
0 1020304050
TEST CIRCUIT 9
I
S
= 3.0 A
V
DD
= 4.8 V
12 V
19.2 V
Q
G
- Gate Charge - nC
SOURCE TO SOURCE DIODE FORWARD
VOLTAGE
I
F
- Diode Forward Current - A
0.01
0.1
1
10
100
00.511.52
TEST CIRCUIT 6
Puls e d
V
GS
= 2.5 V
0 V
V
F(S-S)
- Source to Source Voltage - V
P1-P3P4-P6P7-P9P10-P12

UPA2375T1P-E1-A

Mfr. #:
Buy UPA2375T1P-E1-A
Manufacturer:
Renesas Electronics
Description:
MOSFET POWER MOSFET
Lifecycle:
New from this manufacturer.
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