VS-180RKI...PbF, VS-181RKI...PbF Series
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Vishay Semiconductors
Revision: 11-Mar-14
3
Document Number: 94382
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Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
TYP. MAX.
Maximum peak gate power P
GM
T
J
= T
J
maximum, t
p
5 ms 10
W
Maximum average gate power P
G(AV)
T
J
= T
J
maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current I
GM
T
J
= T
J
maximum, t
p
5 ms
3.0 A
Maximum peak positive gate voltage + V
GM
20
V
Maximum peak negative gate voltage - V
GM
5.0
DC gate current required to trigger I
GT
T
J
= - 40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
130 -
mAT
J
= 25 °C 65 150
T
J
= 125 °C 35 -
DC gate voltage required to trigger V
GT
T
J
= - 40 °C 2.0 -
VT
J
= 25 °C 1.2 2.5
T
J
= 125 °C 0.9 -
DC gate current not to trigger I
GD
T
J
= T
J
maximum
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated V
DRM
anode to cathode
applied
10 mA
DC gate voltage not to trigger V
GD
0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction
temperature range
T
J
-40 to 125
°C
Maximum storage temperature range T
Stg
-40 to 150
Maximum thermal resistance,
junction to case
R
thJC
DC operation 0.15
K/W
Maximum thermal resistance,
junction to ambient
R
thCS
Mounting surface, smooth, flat and greased 0.04
Mounting force, ± 10 %
Non-lubricated threads
31
(275)
N · m
(lbf · in)
Lubricated threads
24.5
(210)
Approximate weight 280 g
Case style See dimensions - link at the end of datasheet TO-209AB (TO-93)
R
thJC
CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.050 0.032
T
J
= T
J
maximum K/W
120° 0.063 0.059
90° 0.080 0.082
60° 0.118 0.124
30° 0.225 0.228
