OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

VS-181RKI100PBF

P1-P3P4-P6P7-P8
VS-180RKI...PbF, VS-181RKI...PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Mar-14
4
Document Number: 94382
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Maximum Allowable Case
Temperature (°C)
Average On-State Current (A)
80 140 18040 1206020 100 160
200
0
130
120
110
100
90
80
70
30°
60°
90°
120°
180°
Ø
Conduction angle
R
thJC
(DC) = 0.15 K/W
94382_01
Maximum Allowable Case
Temperature (°C)
Average On-State Current (A)
50 100 200150 250 3000
70
80
90
100
110
120
130
30°
60°
DC
90°
120°
180°
R
thJC
(DC) = 0.15 K/W
Conduction period
Ø
94382_02
Maximum Average On-State
Power Loss (W)
Average On-State Current (A)
40 80 120 140 160 180
0
60 100
20
240
220
200
180
160
140
120
100
80
60
40
20
0
Ø
Conduction angle
T
J
= 125 °C
RMS limit
180°
120°
90°
60°
30°
94382_03a
Maximum Average On-State
Power Loss (W)
Maximum Allowable
Ambient Temperature (°C)
25 50 75 100 125
0
240
220
200
180
160
140
120
100
80
60
40
20
0
94382_03b
2 K/W
1.5 K/W
1 K/W
0.8 K/W
0.6 K/W
0.3 K/W
0.2 K/W
R
thSA
= 0.1 K/W - ΔR
Maximum Average On-State
Power Loss (W)
Average On-State Current (A)
100 200 300
0
150 250
50
350
300
250
200
150
100
50
0
94382_04a
DC
180°
120°
90°
60°
30°
RMS limit
T
J
= 125 °C
Conduction period
Ø
Maximum Average On-State
Power Loss (W)
Maximum Allowable
Ambient Temperature (°C)
25 50 75 100 125
0
350
300
250
200
150
100
50
0
94382_04b
2 K/W
1.5 K/W
1 K/W
0.8 K/W
0.6 K/W
0.3 K/W
0.2 K/W
R
thSA
= 0.1 K/W - ΔR
VS-180RKI...PbF, VS-181RKI...PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Mar-14
5
Document Number: 94382
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal impedance Z
thJC
Characteristics
Peak Half Sine Wave
On-State Current (A)
Number of Equal Amplitude Half
Cycle Current Pulses (N)
10 1001
1500
2000
2500
3500
3000
4000
94382_05
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
On-State Current (A)
Pulse Train Duration (s)
0.1 10.01
1500
2000
2500
3500
3000
4000
94382_06
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial T
J
= 125 °C
No voltage reapplied
Rated V
RRM
reapplied
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
0.5 1.0 1.5 2.0 2.5 3.0
100
10 000
1000
T
J
= 125 °C
T
J
= 25 °C
94382_07
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Z
thJC
- Transient Thermal
Impedance (K/W)
94382_08
Steady state value
R
thJC
= 0.15 K/W
(DC operation)
VS-180RKI...PbF, VS-181RKI...PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Mar-14
6
Document Number: 94382
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95077
0.1
1
10
100
0.001
94382_09
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.01 0.1 1 10 1000100
Rectangular gate pulse
(a) Recommended load line for
rated dI/dt: 20 V, 30 Ω,
t
r
≤ 0.5 μs, t
p
≥ 6 μs
(b) Recommended load line for
≤ 30 % rated dI/dt: 15 V, 40 Ω,
t
r
≤ 1 μs, t
p
≥ 6 μs
(b)
(a)
V
GD
I
GD
(1) P
GM
= 12 W, t
p
= 5 ms
(2) P
GM
= 30 W, t
p
= 2 ms
(3) P
GM
= 60 W, t
p
= 1 ms
(4) P
GM
= 200 W, t
p
= 300 μs
(1) (2) (3) (4)
Frequency limited by P
G(AV)
T
J
= 25 °C
T
J
= 125 °C
T
J
= 40 °C
2 -I
T(AV)
rated average output current (rounded/10)
1 - Vishay Semiconductors product
4
- Thyristor
5
- Voltage code x 10 = V
RRM
(see Voltage Ratings table)
Device code
5 61 32 4
18VS- 1 RKI 100 PbF
6
-
None = Standard production
PbF = Lead (Pb)-free
3
-
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
P1-P3P4-P6P7-P8

VS-181RKI100PBF

Mfr. #:
Buy VS-181RKI100PBF
Manufacturer:
Vishay Semiconductors
Description:
SCRs 180 Amp 1000 Volt 285 Amp IT(RMS)
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet