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IRFS4010TRL7PP

P1-P3P4-P6P7-P9
IRFS4010-7PPbF
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical C
OSS
Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
0.0 0.5 1.0 1.5
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
-60 -40 -20 0 20 40 60 80 100120140160180
T
J
, Temperature ( °C )
95
100
105
110
115
120
125
V
(
B
R
)
D
S
S
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
(
V
)
Id = 5mA
0 102030405060708090100110
V
DS,
Drain-to-Source Voltage (V)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
E
n
e
r
g
y
(
µ
J
)
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
20
40
60
80
100
120
140
160
180
200
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
200
400
600
800
1000
1200
1400
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 21A
38A
BOTTOM 110A
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
DC
IRFS4010-7PPbF
www.irf.com 5
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 14. Typical Avalanche Current vs.Pulsewidth
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = DT/ Z
thJC
I
av
=
2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
°
C
/
W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= τi/Ri
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W) τi (sec)
0.02001 0.000025
0.05145 0.000094
0.19436 0.002047
0.13433 0.012818
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
E
A
R
,
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
I
D
= 110A
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
A
v
a
l
a
n
c
h
e
C
u
r
r
e
n
t
(
A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Τ
j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆
Tj = 150°C and
Tstart =25°C (Single Pulse)
IRFS4010-7PPbF
6 www.irf.com
Fig. 17 - Typical Recovery Current vs. di
f
/dt
Fig 16. Threshold Voltage vs. Temperature
Fig. 19 - Typical Stored Charge vs. di
f
/dtFig. 18 - Typical Recovery Current vs. di
f
/dt
Fig. 20 - Typical Stored Charge vs. di
f
/dt
0 200 400 600 800 1000
di
F
/dt (A/µs)
0
5
10
15
20
25
30
I
R
R
(
A
)
I
F
= 74A
V
R
= 85V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/µs)
0
5
10
15
20
25
30
I
R
R
(
A
)
I
F
= 110A
V
R
= 85V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/µs)
100
200
300
400
500
600
700
800
900
1000
Q
R
R
(
A
)
I
F
= 74A
V
R
= 85V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/µs)
200
300
400
500
600
700
800
900
1000
Q
R
R
(
A
)
I
F
= 110A
V
R
= 85V
T
J
= 25°C
T
J
= 125°C
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
G
S
(
t
h
)
,
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
I
D
= 1.0mA
I
D
= 1.0A
P1-P3P4-P6P7-P9

IRFS4010TRL7PP

Mfr. #:
Buy IRFS4010TRL7PP
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 100V 190A 4.0mOhm 150nC Qg
Lifecycle:
New from this manufacturer.
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