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BUK7615-100A,118

P1-P3P4-P6P7-P7
Philips Semiconductors Product specification
TrenchMOS transistor BUK7615-100A
Standard level FET
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope V
DS
Drain-source voltage 100 V
suitable for surface mounting. Using I
D
Drain current (DC) 75 A
’trench’ technology the device P
tot
Total power dissipation 230 W
features very low on-state T
j
Junction temperature 175 ˚C
resistance. It is intended for use in R
DS(ON)
Drain-source on-state 15 mΩ
automotive and general purpose resistance V
GS
= 10 V
switching applications.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 gate
2 drain (no connection
possible)
3 source
mb drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
Drain-source voltage - - 100 V
V
DGR
Drain-gate voltage R
GS
= 20 kΩ - 100 V
±V
GS
Gate-source voltage - - 20 V
I
D
Drain current (DC) T
mb
= 25 ˚C - 75 A
I
D
Drain current (DC) T
mb
= 100 ˚C - 53 A
I
DM
Drain current (pulse peak value) T
mb
= 25 ˚C - 240 A
P
tot
Total power dissipation T
mb
= 25 ˚C - 230 W
T
stg
, T
j
Storage & operating temperature - - 55 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction to - - 0.65 K/W
mounting base
R
th j-a
Thermal resistance junction to Minimum footprint, FR4 50 - K/W
ambient board
d
g
s
13
mb
2
January 1999 1 Rev 1.000
Philips Semiconductors Product specification
TrenchMOS transistor BUK7615-100A
Standard level FET
STATIC CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown V
GS
= 0 V; I
D
= 0.25 mA; 100 - - V
voltage T
j
= -55˚C 89 - - V
V
GS(TO)
Gate threshold voltage V
DS
= V
GS
; I
D
= 1 mA 2 3.0 4.0 V
T
j
= 175˚C 1 - - V
T
j
= -55˚C - - 4.4 V
I
DSS
Zero gate voltage drain current V
DS
= 100 V; V
GS
= 0 V; - 0.05 10 µA
T
j
= 175˚C - - 500 µA
I
GSS
Gate source leakage current V
GS
= ±20 V; V
DS
= 0 V - 2 100 nA
R
DS(ON)
Drain-source on-state V
GS
= 10 V; I
D
= 25 A - 12.0 15.0 mΩ
resistance T
j
= 175˚C - - 40.5 mΩ
DYNAMIC CHARACTERISTICS
T
mb
= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
iss
Input capacitance V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz - 4500 6000 pF
C
oss
Output capacitance - 550 660 pF
C
rss
Feedback capacitance - 305 400 pF
t
d on
Turn-on delay time V
DD
= 30 V; R
load
=1.2Ω; - 35 55 ns
t
r
Turn-on rise time V
GS
= 10 V; R
G
= 10 Ω - 85 125 ns
t
d off
Turn-off delay time - 150 225 ns
t
f
Turn-off fall time - 70 100 ns
L
d
Internal drain inductance Measured from upper edge of drain - 2.5 - nH
tab to centre of die
L
s
Internal source inductance Measured from source lead - 7.5 - nH
soldering point to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
Continuous reverse drain - - 75 A
current
I
DRM
Pulsed reverse drain current - - 240 A
V
SD
Diode forward voltage I
F
= 25 A; V
GS
= 0 V - 0.85 1.2 V
I
F
= 75 A; V
GS
= 0 V - 1.1 - V
t
rr
Reverse recovery time I
F
= 75 A; -dI
F
/dt = 100 A/µs; - 80 - ns
Q
rr
Reverse recovery charge V
GS
= -10 V; V
R
= 30 V - 0.35 - µC
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
Drain-source non-repetitive I
D
= 35 A; V
DD
≤ 25 V; - - 120 mJ
unclamped inductive turn-off V
GS
= 10 V; R
GS
= 50 Ω; T
mb
= 25 ˚C
energy
January 1999 2 Rev 1.000
Philips Semiconductors Product specification
TrenchMOS transistor BUK7615-100A
Standard level FET
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
mb
); conditions: V
GS
≥
5 V
Fig.3. Safe operating area. T
mb
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 ˚C
.
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 ˚C
.
R
DS(ON)
= f(I
D
); parameter V
GS
0 20 40 60 80 100 120 140 160 180
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.00001 0.001 0.1 10
0.001
0.01
0.1
1
D =
t
p
t
p
T
T
P
t
D
Zth / (K/W)
t/S
D =
0.5
0.2
0.1
0.05
0.02
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0246810
0
50
100
150
200
250
300
ID/A
VDS/V
VGS\V =
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
9.010.020.0
1 10 100
1
10
100
1000
ID/A
VDS/V
RDS(ON) = VDS/ID
tp =
100mS
10mS
1mS
100uS
1uS
DC
0 20406080100
11
12
13
14
15
16
17
18
19
20
RDS(ON)/mOhm
ID/A
VGS/V =
5.5
6.0
6.5
7.0
8.0
10.0
January 1999 3 Rev 1.000
P1-P3P4-P6P7-P7

BUK7615-100A,118

Mfr. #:
Buy BUK7615-100A,118
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 100V 75A D2PAK
Lifecycle:
New from this manufacturer.
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