DATA SHEET
Product specification
Supersedes data of 1999 Nov 02
2000 Apr 03
DISCRETE SEMICONDUCTORS
PRF949
UHF wideband transistor
M3D173
2000 Apr 03 2
Philips Semiconductors Product specification
UHF wideband transistor PRF949
FEATURES
Small size
Low noise
Low distortion
High gain
Gold metallization ensures excellent reliability.
APPLICATIONS
Communication and instrumentation systems.
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT416
(SC-75) package. The transistor is primarily intended for
wideband applications in the GHz range in the RF front
end of analog and digital cellular telephones, cordless
phones, radar detectors, pagers and satellite TV-tuners.
PINNING SOT416 (SC-75)
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
12
3
MBK090
Top view
Fig.1 Simplified outline (SOT416).
Marking code: V0.
QUICK REFERENCE DATA
Note
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
re
feedback capacitance I
C
= 0; V
CB
=6V; f=1MHz 0.3 pF
f
T
transition frequency I
C
= 15 mA; V
CE
=6V; f
m
= 1 GHz 7 9 GHz
G
UM
maximum unilateral power gain I
C
= 15 mA; V
CE
=6V;
T
amb
=25°C; f = 1 GHz
16 dB
NF noise figure Γ
S
= Γ
opt
; I
C
= 5 mA; V
CE
=6V;
f = 1 GHz
1.5 2.5 dB
P
tot
total power dissipation T
s
=75°C; note 1 −−150 mW
R
th j-s
thermal resistance from junction
to soldering point
−−500 K/W
2000 Apr 03 3
Philips Semiconductors Product specification
UHF wideband transistor PRF949
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter 20 V
V
CEO
collector-emitter voltage open base 10 V
V
EBO
emitter-base voltage open collector 1.5 V
I
C
collector current (DC) 50 mA
I
C(AV)
average collector current 50 mA
P
tot
total power dissipation T
s
=75°C; note 1 150 mW
T
stg
storage temperature 65 +150 °C
T
j
junction temperature 150 °C
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 500 K/W

PRF949,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors NPN 10V 9GHZ
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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