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PRF949,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
2000 Apr 03 7
Philips Semiconductors Product specification
UHF wideband transistor PRF949
handbook, halfpage
4
0
2
3
1
MGS504
NF
(dB)
(2)
(3)
(1)
(5)
(6)
(4)
10
−1
11010
2
I
C
(mA)
Fig.10 Minimum noise figure as a function of
collector current; typical values.
V
CE
=6V.
(1) f = 2 GHz.
(2) f = 1.5 GHz.
(3) f = 1 GHz.
(4) f = 900 MHz.
(5) f = 800 MHz.
(6) f = 500 MHz.
handbook, halfpage
4
0
MGS505
10
2
10
3
10
4
1
2
3
NF
(dB)
f (MHz)
(2)
(3)
(1)
Fig.11 Minimum noise figure as a function of
frequency; typical values.
V
CE
=6V.
(1) I
C
=30mA.
(2) I
C
=15mA.
(3) I
C
= 5 mA.
2000 Apr 03 8
Philips Semiconductors Product specification
UHF wideband transistor PRF949
handbook, full pagewidth
MGS506
0
0.2
0.6
0.4
0.8
1.0
1.0
+5
+2
+1
−0.2
−0.5
−1
−2
−5
0.5 1
2 5
180
°
−135°
−90°
−45°
0°
45°
90°
unstable
region load
unstable region
source
(2)
(3)
(4)
(5)
Γopt
(6)
(1)
0
+0.2
+0.5
135°
Fig.12 Common emitter available gain, noise and stability circles; typical values.
f = 1 GHz; V
CE
=6V;
I
C
= 5 mA; Z
o
=50Ω.
(1) G = 17 dB.
(2) G = 16 dB.
(3) G = 15 dB.
(4) NF = 1.6 dB.
(5) NF = 1.8 dB.
(6) NF = 2 dB.
handbook, full pagewidth
MGS507
0
0.2
0.6
0.4
0.8
1.0
1.0
+5
+2
+1
+0.5
−0.5
−1
−2
−5
0.2
1
2
5
180
°
−135°
−90°
−45°
0°
45°
90°
135°
(2)
(3)
(4)
(5)
(6)
(7)
unstable
region load
unstable region
source
(1)
Γopt
0
+0.2
0.5
−0.2
Fig.13 Common emitter available gain, noise and stability circles; typical values.
f = 2 GHz; V
CE
= 6 V; I
C
= 5 mA;
Z
o
=50Ω.
(1) G
max
= 10.9 dB.
(2) G = 10 dB.
(3) G = 9 dB.
(4) G = 8 dB.
(5) NF = 2.1 dB.
(6) NF = 2.3 dB.
(7) NF = 2.5 dB.
2000 Apr 03 9
Philips Semiconductors Product specification
UHF wideband transistor PRF949
handbook, full pagewidth
MGS508
0
0.2
0.6
0.4
0.8
1.0
1.0
+5
+2
+1
+0.5
+0.2
0
−0.2
−0.5
−1
−2
−5
0.2 0.5 1
2
5
180°
−135°
−90°
−45°
0°
45°
90°
135°
100 MHz
200 MHz
500 MHz
1 GHz
2 GHz
3 GHz
Fig.14 Common emitter input reflection coefficient (s
11
); typical values.
V
CE
= 6 V; I
C
= 15 mA; Z
o
=50Ω.
handbook, full pagewidth
MGS509
50 40 30 20 10
180
°
−135°
−90°
−45°
0°
45°
90°
135°
100 MHz
200 MHz
500 MHz
1 GHz
2 GHz
3 GHz
Fig.15 Common emitter forward transmission coefficient (s
21
); typical values.
V
CE
= 6 V; I
C
=15mA.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PRF949,115

Mfr. #:
Buy PRF949,115
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors NPN 10V 9GHZ
Lifecycle:
New from this manufacturer.
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