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NRVTS2H60ESFT3G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2017
July, 2018 − Rev. 1
1 Publication Order Number:
NRVTS2H60ESF/D
NRVTS2H60ESF,
NRVTSM260EV2
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 11.7 mg (Approximately)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
• MSL 1
Typical Applications
• Switching Power Supplies including Compact Adapters and Flat
Panel Display
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
TRENCH SCHOTTKY
RECTIFIER
2.0 AMPERES
60 VOLTS
MARKING DIAGRAMs
2H6 = Specific Device Code
M = Date Code
G = Pb−Free Package
SOD−123FL
CASE 498
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NRVTS2H60ESFT1G SOD−123FL
(Pb−Free)
3,000 /
Tape & Ree
l
2H6MG
G
NRVTS2H60ESFT3G SOD−123FL
(Pb−Free)
10,000 /
Tape & Ree
l
www.onsemi.com
(Note: Microdot may be in either location)
M
2H6G
12
POWERMITE
CASE 457
NRVTSM260EV2T1G Powermite
(Pb−Free)
3,000 /
Tape & Ree
l
NRVTSM260EV2T3G Powermite
(Pb−Free)
12,000 /
Tape & Ree
l
NRVTS2H60ESF, NRVTSM260EV2
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
60 V
Average Rectified Forward Current
(T
L
= 125°C)
I
O
2.0 A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, T
L
= 139°C)
I
FRM
4.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
50 A
Storage and Operating Junction Temperature Range (Note 1) T
stg
, T
J
−65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 2)
Y
JCL
24.4 °C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JA
85 °C/W
Thermal Resistance, Junction−to−Ambient (Note 3)
R
q
JA
330 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 4)
(I
F
= 1.0 A, T
J
= 25°C)
(I
F
= 2.0 A, T
J
= 25°C)
(I
F
= 1.0 A, T
J
= 125°C)
(I
F
= 2.0 A, T
J
= 125°C)
V
F
0.55
0.65
0.47
0.58
V
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
I
R
12
3
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm
2
copper pad size (Approximately 1 in
2
) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm
2
copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
NRVTS2H60ESF, NRVTSM260EV2
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
1.10.90.70.50.30.1
1
10
100
1.20.80.60.2
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V) V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
6040302010 50302010
Figure 5. Typical Junction Capacitance
V
R
, REVERSE VOLTAGE (V)
0.1
100
1000
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
C, JUNCTION CAPACITANCE (pF)
1.4
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
50
1.E−07
1.E−06
1.E−05
1.E−01
40
1.E−07
1.E−05
1.E−01
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
T
A
= 85°C
T
A
= 125°C
T
A
= −55°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= −55°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
1.E−04
T
J
= 25°C
1.5 0.4 1.0
T
A
= 150°C
T
A
= 85°C
T
A
= 85°C
0.1 0.1
1.E−02
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
T
A
= 85°C
6
0
110
1.E−06
10
1.E−03
1.3
1.E−04
1.E−03
1.E−02
T
A
= 175°C
1.
6
T
A
= 175°C
T
A
= 175°C
T
A
= 175°C
Figure 6. Current Derating
T
C
, CASE TEMPERATURE (°C)
100
2
4
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
R
q
JL
= 24.4°C/W
160
0
3
1
SQUARE WAVE
DC
110 120 130 140 150 170 18
0
P1-P3P4-P6

NRVTS2H60ESFT3G

Mfr. #:
Buy NRVTS2H60ESFT3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers TRENCH SCHOTTKY RECTIFIER
Lifecycle:
New from this manufacturer.
Delivery:
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