4
www.fairchildsemi.com
FM93CS66 Rev. C.1
FM93CS66 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM
with Data Protect and Sequential Read
Absolute Maximum Ratings (Note 1)
Ambient Storage Temperature -65°C to +150°C
All Input or Output Voltages +6.5V to -0.3V
with Respect to Ground
Lead Temperature
(Soldering, 10 sec.) +300°C
ESD rating 2000V
Operating Conditions
Ambient Operating Temperature
FM93CS66L/LZ 0°C to +70°C
FM93CS66LE/LZE -40°C to +85°C
FM93CS66LV/LZV -40°C to +125°C
Power Supply (V
CC
) 2.7V to 5.5V
DC and AC Electrical Characteristics V
CC
= 2.7V to 4.5V unless otherwise specified. Refer to
page 3 for V
CC
= 4.5V to 5.5V.
Symbol Parameter Conditions Min Max Units
I
CCA
Operating Current CS = V
IH
, SK=256 KHz 1 mA
I
CCS
Standby Current CS = V
IL
L 10 µA
LZ (2.7V to 4.5V) 1 µA
I
IL
Input Leakage V
IN
= 0V to V
CC
±1 µA
I
OL
Output Leakage (Note 2)
V
IL
Input Low Voltage -0.1 0.15V
CC
V
V
IH
Input High Voltage 0.8V
CC
V
CC
+1
V
OL
Output Low Voltage I
OL
= 10µA 0.1V
CC
V
V
OH
Output High Voltage I
OH
= -10µA 0.9V
CC
f
SK
SK Clock Frequency (Note 3) 0 250 KHz
t
SKH
SK High Time 1 µs
t
SKL
SK Low Time 1 µs
t
CS
Minimum CS Low Time (Note 4) 1 µs
t
CSS
CS Setup Time 0.2 µs
t
PRES
PRE Setup Time 50 ns
t
DH
DO Hold Time 70 ns
t
PES
PE Setup Time 50 ns
t
DIS
DI Setup Time 0.4 µs
t
CSH
CS Hold Time 0 ns
t
PEH
PE Hold Time 250 ns
t
PREH
PRE Hold Time 50 ns
t
DIH
DI Hold Time 0.4 µs
t
PD
Output Delay 2 µs
t
SV
CS to Status Valid 1 µs
t
DF
CS to DO in Hi-Z CS = V
IL
0.4 µs
t
WP
Write Cycle Time 15 ms
Capacitance T
A
= 25°C, f = 1 MHz or 256
KHz (Note 5)
Symbol Test Typ Max Units
C
OUT
Output Capacitance 5 pF
C
IN
Input Capacitance 5 pF
Note 1: Stress above those listed under Absolute Maximum Ratings may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of the specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect device reliability.
Note 2: Typical leakage values are in the 20nA range.
Note 3: The shortest allowable SK clock period = 1/f
SK
(as shown under the f
SK
parameter). Maximum
SK clock speed (minimum SK period) is determined by the interaction of several AC parameters stated
in the datasheet. Within this SK period, both t
SKH
and t
SKL
limits must be observed. Therefore, it is not
allowable to set 1/f
SK
= t
SKHminimum
+ t
SKLminimum
for shorter SK cycle time operation.
Note 4: CS (Chip Select) must be brought low (to V
IL
) for an interval of t
CS
in order to reset all internal
device registers (device reset) prior to beginning another opcode cycle. (This is shown in the opcode
diagram on the following page.)
Note 5: This parameter is periodically sampled and not 100% tested.
AC Test Conditions
V
CC
Range V
IL
/V
IH
V
IL
/V
IH
V
OL
/V
OH
I
OL
/I
OH
Input Levels Timing Level Timing Level
2.7V V
CC
5.5V 0.3V/1.8V 1.0V 0.8V/1.5V ±10µA
(Extended Voltage Levels)
4.5V V
CC
5.5V 0.4V/2.4V 1.0V/2.0V 0.4V/2.4V 2.1mA/-0.4mA
(TTL Levels)
Output Load: 1 TTL Gate (C
L
= 100 pF)
5
www.fairchildsemi.com
FM93CS66 Rev. C.1
FM93CS66 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM
with Data Protect and Sequential Read
Pin Description
Chip Select (CS)
This is an active high input pin to FM93CS66 EEPROM (the device)
and is generated by a master that is controlling the device. A high
level on this pin selects the device and a low level deselects the
device. All serial communications with the device is enabled only
when this pin is held high. However this pin cannot be permanently
tied high, as a rising edge on this signal is required to reset the
internal state-machine to accept a new cycle and a falling edge to
initiate an internal programming after a write cycle. All activity on the
SK, DI and DO pins are ignored while CS is held low.
Serial Clock (SK)
This is an input pin to the device and is generated by the master that
is controlling the device. This is a clock signal that synchronizes the
communication between a master and the device. All input informa-
tion (DI) to the device is latched on the rising edge of this clock input,
while output data (DO) from the device is driven from the rising edge
of this clock input. This pin is gated by CS signal.
Serial Input (DI)
This is an input pin to the device and is generated by the master
that is controlling the device. The master transfers Input informa-
tion (Start bit, Opcode bits, Array addresses and Data) serially via
this pin into the device. This Input information is latched on the
rising edge of the SCK. This pin is gated by CS signal.
Serial Output (DO)
This is an output pin from the device and is used to transfer Output
data via this pin to the controlling master. Output data is serially
shifted out on this pin from the rising edge of the SCK. This pin is
active only when the device is selected.
Protect Register Enable (PRE)
This is an active high input pin to the device and is used to
distinguish operations to memory array and operations to Protect
Register. When this pin is held low, operations to the memory
array are enabled. When this pin is held high, operations to the
Protect Register are enabled. This pin operates in conjunction
with PE pin. Refer Table1 for functional matrix of this pin for
various operations.
Program Enable (PE)
This is an active high input pin to the device and is used to enable
operations, that are write in nature, to the memory array and to the
Protect register. When this pin is held high, operations that are
write in nature are enabled. When this pin is held low, operations
that are write in nature are disabled. This pin operates in
conjunction with PRE pin. Refer Table1 for functional matrix of this
pin for various operations.
Microwire Interface
A typical communication on the Microwire bus is made through the
CS, SK, DI and DO signals. To facilitate various operations on the
Memory array and on the Protect Register, a set of 10 instructions
are implemented on FM93CS66. The format of each instruction is
listed in Table 1.
Instruction
Each of the above 10 instructions is explained under individual
instruction descriptions.
Start Bit
This is a 1-bit field and is the first bit that is clocked into the device
when a Microwire cycle starts. This bit has to be 1 for a valid cycle
to begin. Any number of preceding 0 can be clocked into the
device before clocking a 1.
Opcode
This is a 2-bit field and should immediately follow the start bit.
These two bits (along with PRE, PE signals and 2 MSB of address
field) select a particular instruction to be executed.
Address Field
This is a 8-bit field and should immediately follow the Opcode bits.
In FM93CS66, all 8 bits are used for address decoding during
READ, WRITE and PRWRITE instructions.During all other in-
structions (with the exception of PRREAD), the MSB 2 bits are
used to decode instruction (along with Opcode bits, PRE and PE
signals).
Data Field
This is a 16-bit field and should immediately follow the Address
bits. Only the WRITE and WRALL instructions require this field.
D15 (MSB) is clocked first and D0 (LSB) is clocked last (both
during writes as well as reads).
TABLE 1. Instruction set
Instruction Start Bit Opcode Field Address Field Data Field PRE Pin PE Pin
READ 1 10 A7 A6 A5 A4 A3 A2 A1 A0 0 X
WEN 1 00 1 1XXXXXX 0 1
WRITE 1 01 A7 A6 A5 A4 A3 A2 A1 A0 D15-D0 0 1
WRALL 1 00 0 1 X X XXXX D15-D0 0 1
WDS 1 00 0 0XXXXXX 0 X
PRREAD 1 10 XXXXXXXX 1 X
PREN 1 00 1 1 X X XXXX 1 1
PRCLEAR 1 11 11111111 1 1
PRWRITE 1 01 A7 A6 A5 A4 A3 A2 A1 A0 1 1
PRDS 1 00 00000000 1 1
6
www.fairchildsemi.com
FM93CS66 Rev. C.1
FM93CS66 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM
with Data Protect and Sequential Read
Functional Description
A typical Microwire cycle starts by first selecting the device
(bringing the CS signal high). Once the device is selected, a valid
Start bit (1) should be issued to properly recognize the cycle.
Following this, the 2-bit opcode of appropriate instruction should
be issued. After the opcode bits, the 8-bit address information
should be issued. For certain instructions, some (or all) of these
8 bits are dont care values (can be 0 or 1), but they should still
be issued. Following the address information, depending on the
instruction (WRITE and WRALL), 16-Bit data is issued. Other-
wise, depending on the instruction (READ and PRREAD), the
device starts to drive the output data on the DO line. Other
instructions perform certain control functions and do not deal with
data bits. The Microwire cycle ends when the CS signal is brought
low. However during certain instructions, falling edge of the CS
signal initiates an internal cycle (Programming), and the device
remains busy till the completion of the internal cycle. Each of the
10 instructions is explained in detail in the following sections.
Memory Instructions
Following five instructions, READ, WEN, WRITE, WRALL and
WDS are specific to operations intended for memory array. The
PRE pin should be held low during these instructions.
1) Read and Sequential Read (READ)
READ instruction allows data to be read from a selected location
in the memory array. Input information (Start bit, Opcode and
Address) for this instruction should be issued as listed under
Table1. Upon receiving a valid input information, decoding of the
opcode and the address is made, followed by data transfer from
the selected memory location into a 16-bit serial-out shift register.
This 16-bit data is then shifted out on the DO pin. D15 bit (MSB)
is shifted out first and D0 bit (LSB) is shifted out last. A dummy-bit
(logical 0) precedes this 16-bit data output string. Output data
changes are initiated on the rising edge of the SK clock. After
reading the 16-bit data, the CS signal can be brought low to end
the Read cycle. The PRE pin should be held low during this cycle.
Refer
Read cycle diagram
.
This device also offers sequential memory read operation to
allow reading of data from the additional memory locations instead
of just one location. It is started in the same manner as normal read
but the cycle is continued to read further data (instead of terminat-
ing after reading the first 16-bit data). After providing 16-bit data,
the device automatically increments the address pointer to the
next location and continues to provide the data from that location.
Any number of locations can be read out in this manner, however,
after reading out from the last location, the address pointer points
back to the first location. If the cycle is continued further, data will
be read from this first location onward. In this mode of read, the
dummy-bit is present only when the very first data is read (like
normal read cycle) and is not present on subsequent data reads.
The PRE pin should be held low during this cycle. Refer
Sequen-
tial Read cycle diagram
.
2) Write Enable (WEN)
When V
CC
is applied to the part, it powers up in the Write Disable
(WDS) state. Therefore, all programming operations (for both
memory array and Protect Register) must be preceded by a Write
Enable (WEN) instruction. Once a Write Enable instruction is
executed, programming remains enabled until a Write Disable
(WDS) instruction is executed or V
CC
is completely removed from
the part. Input information (Start bit, Opcode and Address) for this
WEN instruction should be issued as listed under Table1. The
device becomes write-enabled at the end of this cycle when the
CS signal is brought low. The PRE pin should be held low during
this cycle. Execution of a READ instruction is independent of WEN
instruction. Refer
Write Enable cycle diagram.
3) Write (WRITE)
WRITE instruction allows write operation to a specified location in
the memory with a specified data. This instruction is valid only
when the following are true:
Device is write-enabled (Refer WEN instruction)
Address of the write location is not write-protected
PE pin is held high during this cycle
PRE pin should be held low during this cycle
Input information (Start bit, Opcode, Address and Data) for this
WRITE instruction should be issued as listed under Table1. After
inputting the last bit of data (D0 bit), CS signal must be brought low
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes t
WP
time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
The status of the internal programming cycle can be polled at any
time by bringing the CS signal high again, after t
CS
interval. When
CS signal is high, the DO pin indicates the READY/BUSY status
of the chip. DO = logical 0 indicates that the programming is still
in progress. DO = logical 1 indicates that the programming is
finished and the device is ready for another instruction. It is not
required to provide the SK clock during this status polling. While
the device is busy, it is recommended that no new instruction be
issued. Refer
Write cycle diagram.
It is also recommended to follow this instruction (after the device
becomes READY) with a Write Disable (WDS) instruction to
safeguard data against corruption due to spurious noise, inadvert-
ent writes etc.
4) Write All (WRALL)
Write all (WRALL) instruction is similar to the Write instruction
except that WRALL instruction will simultaneously program all
memory locations with the data pattern specified in the instruction.
This instruction is valid only when the following are true:
Protect Register has been cleared (Refer PRCLEAR
instruction)
Device is write-enabled (Refer WEN instruction)
PE pin is held high during this cycle
PRE pin should be held low during this cycle
Input information (Start bit, Opcode, Address and Data) for this
WRALL instruction should be issued as listed under Table1. After
inputting the last bit of data (D0 bit), CS signal must be brought low
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes t
WP
time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Status of the internal programming can be polled as described
under WRITE instruction description. While the device is busy, it
is recommended that no new instruction be issued. Refer
Write All
cycle diagram.

FM93C66LMT8

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IC EEPROM 4K SPI 250KHZ 8TSSOP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union