Philips Semiconductors
BUK7213-40A
TrenchMOS™ standard level FET
Product data Rev. 01 — 29 January 2004 5 of 14
9397 750 12486
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
6. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 0.25 mA; V
GS
=0V
T
j
=25°C 40--V
T
j
= −55 °C 36--V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
=V
GS
; Figure 9
T
j
=25°C 234V
T
j
= 175 °C 1--V
T
j
= −55 °C - - 4.4 V
I
DSS
drain-source leakage current V
DS
= 40 V; V
GS
=0V
T
j
=25°C - 0.05 10 µA
T
j
= 175 °C - - 500 µA
I
GSS
gate-source leakage current V
GS
= ±20 V; V
DS
= 0 V - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A;
Figure 7 and 8
T
j
=25°C - 10.3 13 mΩ
T
j
= 175 °C - - 24.7 mΩ
Dynamic characteristics
Q
g(tot)
total gate charge V
GS
=10V; V
DD
=32V;
I
D
=25A;Figure 14
-47-nC
Q
gs
gate-to-source charge - 10 - nC
Q
gd
gate-to-drain (Miller) charge - 20 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V;
f = 1 MHz; Figure 12
- 1684 2245 pF
C
oss
output capacitance - 590 708 pF
C
rss
reverse transfer capacitance - 389 532 pF
t
d(on)
turn-on delay time V
DD
= 30 V; R
L
= 1.2 Ω;
V
GS
=10V; R
G
=10Ω
-16-ns
t
r
rise time - 124 - ns
t
d(off)
turn-off delay time - 57 - ns
t
f
fall time - 68 - ns
L
d
internal drain inductance measured from drain to centre
of die
- 2.5 - nH
L
s
internal source inductance measured from source lead to
source bond pad
- 7.5 - nH
