Philips Semiconductors
BUK7213-40A
TrenchMOS™ standard level FET
Product data Rev. 01 — 29 January 2004 7 of 14
9397 750 12486
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
j
=25°C; t
p
= 300 µsT
j
=25°C; I
D
=25A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
T
j
=25°C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain source on-state resistance
factor as a function of junction temperature.
03nk27
0
100
200
300
0246810
V
DS
(V)
I
D
(A)
20 label is V
GS
(V)
18
16
14
12
10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
03nk26
8
10
12
14
16
18
5 101520
V
GS
(V)
R
DSon
(mΩ)
03nk28
8
14
20
26
0 100 200 300
I
D
(A)
R
DSon
(mΩ)
label is V
GS
(V)6 7 8 9 10
20
03aa27
0
0.5
1
1.5
2
-60 0 60 120 180
T
j
(
°
C)
a
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=
