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NCV8852DR2G

P1-P3P4-P6P7-P9P10-P12P13-P13
© Semiconductor Components Industries, LLC, 2016
October, 2016 − Rev. 8
1 Publication Order Number:
NCV8852/D
NCV8852
Automotive Grade
Non-Synchronous Buck
Controller
The NCV8852 is an adjustable−output non−synchronous buck
controller which drives an external P−channel MOSFET. The device
uses peak current mode control with internal slope compensation. The
IC incorporates an internal regulator that supplies charge to the gate
driver.
Protection features include internal soft−start, undervoltage lockout,
cycle−by−cycle current limit, hiccup−mode overcurrent protection,
hiccup−mode short−circuit protection.
Additional features include: programmable switching frequency,
low quiescent current sleep mode and externally synchronizable
switching frequency.
Features
• Ultra Low Iq Sleep Mode
• Adjustable Output with 800 mV ±2.0% Reference Voltage
• Wide Input of 3.1 to 44 V with Undervoltage Lockout (UVLO)
• Programmable Switching Frequency
• Internal Soft−Start (SS)
• Fixed−Frequency Peak Current Mode Control
• Internal Slope Compensating Artificial Ramp
• Internal High−Side PMOS Gate Driver
• Regulated Gate Driver Current Source
• External Frequency Synchronization (SYNC)
• Programmable Cycle−by−Cycle Current Limit (CL)
• Hiccup Overcurrent Protection (OCP)
• Output Short Circuit Hiccup Protection (SCP)
• Space−Saving 8−PIN SOIC Package
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
www.onsemi.com
MARKING
DIAGRAM
Device Package Shipping
†
ORDERING INFORMATION
SOIC−8
SUFFIX D
CASE 751
NCV8852DR2G SOIC−8
(Pb−Free)
2500/Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
8
V8852xx
ALYW
G
1
8
V8852xx= Specific Device Code
xx = (blank), 01
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
ROSC
GDRV
ISNS
GND
VIN
FB
COMP
EN/SYNC
PINOUT DIAGRAM
1
2
3
4
8
7
6
5
NCV885201D1R2G SOIC−8
(Pb−Free)
2500/Tape & Ree
l
NCV8852
www.onsemi.com
2
Figure 1. NCV8852 Application Diagram
Figure 2. NCV8852 Simple Block Diagram
ROSC
GDRV
ISNS
GND
VIN
VIN
VO
FB
COMP
EN/SYNC
8
GDRV
VIN
V
REF
DRIVE
LOGIC
FAULT
LOGIC
CSA
ISNS7
6
3
COMP
VEA
5
GND
PWM
SCP
OCP
UVLO
OSC
CLAMP
4
FB
2
EN/SYNC
SS
CL
1
ROSC
EN/SYNC
+
PIN DESCRIPTIONS
No Pin Symbol Function
1 ROSC Use a resistor from ground to set the frequency.
2 EN/SYNC Enable and synchronization input. The falling edge synchronizes the internal oscillator. The part is disabled
into sleep mode when this pin is brought low for longer than the enable time−out period.
3 COMP Output of the voltage error amplifier. An external compensator network from COMP to GND is used to sta-
bilize the converter and tailor transient performance.
4 FB Output voltage feedback. A resistor from the output voltage to FB with another resistor from FB to GND
creates a voltage divider for regulation and programming of the output voltage.
5 GND Ground reference.
6 GDRV Gate driver output. Connect to gate of the external P−channel MOSFET. A series resistance can be added
from GDRV to the gate to tailor EMC performance.
7 ISNS Current sense input. Connect this pin to the source of the external P−channel MOSFET, through a current−
sense resistor to VIN to sense the switching current for regulation and current limiting.
8 VIN Main power input for the IC.
NCV8852
www.onsemi.com
3
MAXIMUM RATINGS (Voltages are with respect to GND unless otherwise indicated.)
Rating
Value Unit
DC Voltage (VIN, ISNS, GDRV) −0.3 to 44 V
Peak Transient Voltage (Load Dump on VIN) 44 V
DC Voltage (EN/SYNC) −0.3 to 6.0 V
DC Voltage (COMP, FB, ROSC) −0.3 to 3.6 V
DC Voltage Stress (VIN − GDRV) −0.7 to 12 V
Operating Junction Temperature Range −40 to 150 °C
Storage Temperature Range −65 to 150 °C
Peak Reflow Soldering Temperature: Pb−Free 60 to 150 seconds at 217°C 265 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
PACKAGE ATTRIBUTES
Characteristic Value
ESD Capability
Human Body Model
Machine Model
Charge Device Model
2.0 kV
200 V
>1.0 kV
Moisture Sensitivity Level MSL 1 260°C
Package Thermal Resistance
Junction–to–Ambient, R
q
JA
100°C/W
P1-P3P4-P6P7-P9P10-P12P13-P13

NCV8852DR2G

Mfr. #:
Buy NCV8852DR2G
Manufacturer:
ON Semiconductor
Description:
Switching Controllers AUTOMOTIVE GRADE NON-SYNC
Lifecycle:
New from this manufacturer.
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