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NCV8852DR2G

P1-P3P4-P6P7-P9P10-P12P13-P13
NCV8852
www.onsemi.com
4
ELECTRICAL CHARACTERISTICS
(V
IN
= 3.4 V to 36 V, EN = 5 V. Min/Max values are valid for the temperature range −40°C ≤ T
J
≤ 150°C unless noted otherwise, and are
guaranteed by test, design or statistical correlation)
Characteristic
Symbol Conditions Min Typ Max Unit
GENERAL
Quiescent Current
I
q,sleep
V
IN
= 13.2 V, EN = 0 V, Sleep Mode 2.5 6.0
mA
I
q,off
V
IN
= 13.2 V, EN = 5 V or toggled, V
FB
= 1 V,
No Switching
2.0 3.0 mA
I
q,on
V
IN
= 13.2 V, EN = 5 V or toggled, V
FB
= 0 V,
Switching
3.0 5.0 mA
Undervoltage Lockout V
uvlo
V
IN
decreasing 2.9 3.1 3.3 V
Undervoltage Lockout
Hysteresis
V
uvlo,hys
50 150 300 mV
Overvoltage Lockout V
ovlo
36.9 38 39.3 V
OSCILLATOR
Switching Frequency
f
SW
100 500 kHz
R
OSC
Voltage V
ROSC
1.0 V
Default Switching f
SW
R
OSC
= Open
R
OSC
= 100 kW
R
OSC
= 20 kW
R
OSC
= 10 kW
153
180
283
409
170
200
315
455
187
220
347
501
kHz
Slope Compensation m
a
25.5
mV/ms
Minimum On Time t
onmin
90 110 140 ns
Max Duty Cycle − Switching D
max,sw
Maximum duty cycle when switching 93 %
Max Duty Cycle D
max
100 %
Soft−Start Time t
ss
1.0 1.5 2.0 ms
Soft−Start Delay t
ss,dlly
200 300 400
ms
EN/SYNC
Low Threshold
V
s,il
0.8 V
High Threshold V
s,ih
2.0 V
Input Current I
sync
5.0 10
mA
SYNC Frequency Range f
sync
Relative to Nominal Switching Frequency 80 600 %
SYNC Delay t
s,dly
From SYNC falling edge to GDRV falling edge 50 100 ns
SYNC Duty Cycle D
sync
25 75 %
Disable Delay Time t
en
% of f
SW
300 %
VOLTAGE ERROR AMP
DC Gain
A
v
55 80 91 dB
Gain−Bandwidth Product G
BW
1.7 2.4 3.1 MHz
FB Bias Current I
vfb,bias
0.1 1.0
mA
Charge Currents
I
src,vea
Source, V
FB
= 0.9 V, V
COMP
= 1.2 V 1.2 1.8 2.5
mA
I
snk,vea
Sink, V
FB
= 0.7 V, V
COMP
= 1.2 V 0.5 0.8 1.0
Reference Voltage V
ref
784 800 816 mV
High Saturation Voltage V
c,max
2.2 2.3 V
Low Saturation Voltage V
c,min
0.001 0.3 V
CURRENT SENSE AMP
Common−Mode Range
CMR 3.1 40 V
Differential Mode Range DMR 300 mV
Amplifier Gain A
csa
2.0 V/V
NCV8852
www.onsemi.com
5
ELECTRICAL CHARACTERISTICS
(V
IN
= 3.4 V to 36 V, EN = 5 V. Min/Max values are valid for the temperature range −40°C ≤ T
J
≤ 150°C unless noted otherwise, and are
guaranteed by test, design or statistical correlation)
Characteristic UnitMaxTypMinConditionsSymbol
CURRENT SENSE AMP
Input Bias Current
I
sns,bias
NCV8852
NCV885201
30
70
50
120
mA
CURRENT LIMIT / OVER CURRENT PROTECTION
Cycle−by−Cycle Current Limit
Threshold
V
cl
85 100 115 mV
Cycle−by−Cycle Current Limit
Response Time
t
cl
200 nsec
Over Current Protection
Threshold
V
ocp
% of V
cl
125 150 175 %
Over Current Protection
Response Time
t
ocp
200 ns
GATE DRIVERS
Leading Edge Blanking Time
t
on,min
100 ns
Gate Driver Pull Up Current I
sink
V
IN
− V
GDRV
= 4 V 160 230 300 mA
Gate Driver Pull Down
Current
I
src
V
IN
− V
GDRV
= 4 V 160 230 300 mA
Gate Driver Clamp Voltage
(V
IN
– V
GDRV
)
V
drv
6.0 8.0 10 V
Power Switch Gate to Source
Voltage
V
gs
V
IN
= 4 V 3.8 V
SHORT CIRCUIT PROTECTION
Startup Blanking Time
t
scp,dly
From start of soft−start, % of soft−start time 105 300 %
Short−Circuit Threshold
Voltage
V
scp
% of Feedback Voltage (V
ref
) 65 70 75 %
Hiccup Time t
hcp,dly
% of Soft−Start Time 135 %
SC Response Time t
scp
Switcher Running 60 200 ns
THERMAL SHUTDOWN
Thermal Shutdown Threshold
T
sd
T
J
rising 160 170 180 °C
Thermal Shutdown
Hysteresis
T
sd,hys
T
J
Shutdown – T
J
Startup 10 15 20 °C
Thermal Shutdown Delay t
tsd
T
J
> Thermal Shutdown Threshold to stop
switching
200 ns
NCV8852
www.onsemi.com
6
TYPICAL CHARACTERISTICS CURVES
T
J
, JUNCTION TEMPERATURE (°C)
−50 −25 0 25 50 15012510075
Figure 3. Quiescent Current (Sleep) vs.
Junction Temperature
I
q
, QUIESCENT CURRENT, SLEEP
(mA)
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
T
J
, JUNCTION TEMPERATURE (°C)
−50 −25 0 25 50 15012510075
Figure 4. Quiescent Current vs. Junction
Temperature
I
q
, QUIESCENT CURRENT (mA)
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
Switching
No Switching
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Reference Voltage vs. Junction
Temperature
V
REF
, (V)
−50 −25 0 25 50 15012510075
0.79926
0.79924
0.79922
0.7992
0.79918
0.79916
0.79914
0.79912
0.7991
0.79908
0.79906
T
J
, JUNCTION TEMPERATURE (°C)
−50 −25 0 25 50 15012510075
Figure 6. Switching Frequency (R
OSC
= open)
vs. Junction Temperature
174.5
174
173.5
173
172.5
172
171.5
171
170.5
170
169.5
f
SW
, (kHz)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7. Switching Frequency (R
OSC
= 10 kW)
vs. Junction Temperature
f
SW
, R
OSC
= 10 kW (V)
−50 −25 0 25 50 15012510075
466
464
462
460
458
456
454
452
T
J
, JUNCTION TEMPERATURE (°C)
−50 −25 0 25 50 15012510075
Figure 8. Short−Circuit Protection Threshold
vs. Junction Temperature
70.27
SCP (% of V
fb
)
70.26
70.25
70.24
70.23
70.22
70.21
P1-P3P4-P6P7-P9P10-P12P13-P13

NCV8852DR2G

Mfr. #:
Buy NCV8852DR2G
Manufacturer:
ON Semiconductor
Description:
Switching Controllers AUTOMOTIVE GRADE NON-SYNC
Lifecycle:
New from this manufacturer.
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