Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
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the references to Nexperia, as shown below.
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use http://www.nexperia.com
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
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Kind regards,
Team Nexperia
1. Product profile
1.1 General description
NPN low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a medium power
SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PZ.
1.2 Features and benefits
Low collector-emitter saturation voltage V
CEsat
Optimized switching time
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion
Battery-driven devices
Power management
Charging circuits
1.4 Quick reference data
[1] Pulse test: t
p
300 μs; δ≤0.02.
PBSS4032NZ
30 V, 4.9 A NPN low V
CEsat
(BISS) transistor
Rev. 01 — 31 March 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter voltage open base - - 30 V
I
C
collector current - - 4.9 A
I
CM
peak collector current single pulse;
t
p
1ms
--10A
R
CEsat
collector-emitter
saturation resistance
I
C
=4A;
I
B
=400mA
[1]
-4562.5mΩ
PBSS4032NZ_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 31 March 2010 2 of 15
NXP Semiconductors
PBSS4032NZ
30 V, 4.9 A NPN low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1base
2 collector
3emitter
4 collector
132
4
sym016
2, 4
3
1
Table 3. Ordering information
Type number Package
Name Description Version
PBSS4032NZ SC-73 plastic surface-mounted package with increased
heat sink; 4 leads
SOT223
Table 4. Marking codes
Type number Marking code
PBSS4032NZ PB4032NZ
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 30 V
V
CEO
collector-emitter voltage open base - 30 V
V
EBO
emitter-base voltage open collector - 5 V
I
C
collector current - 4.9 A
I
CM
peak collector current single pulse;
t
p
1ms
-10A
I
B
base current - 1 A

PBSS4032NZ,115

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT Single NPN 30V 4.9A 700mW 145MHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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