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PBSS4032NZ,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
PBSS4032NZ_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 31 March 2010 6 of 15
NXP Semiconductors
PBSS4032NZ
30 V, 4.9 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=30V; I
E
= 0 A - - 100 nA
V
CB
=30V; I
E
=0A;
T
j
=150°C
--50μA
I
CES
collector-emitter
cut-off current
V
CE
=24V; V
BE
= 0 V - - 100 nA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain
[1]
V
CE
=2V; I
C
= 500 mA 300 500 -
V
CE
=2V; I
C
= 1 A 300 500 -
V
CE
=2V; I
C
= 2 A 250 450 -
V
CE
=2V; I
C
= 4 A 200 350 -
V
CE
=2V; I
C
= 6 A 150 275 -
V
CEsat
collector-emitter
saturation voltage
[1]
I
C
=1A; I
B
= 50 mA - 90 125 mV
I
C
=1A; I
B
= 10 mA - 130 180 mV
I
C
=2A; I
B
= 40 mA - 150 210 mV
I
C
=4A; I
B
= 400 mA - 180 250 mV
I
C
=4A; I
B
= 40 mA - 250 375 mV
I
C
=5.4A; I
B
= 270 mA - 240 340 mV
R
CEsat
collector-emitter
saturation resistance
I
C
=4A; I
B
=400mA
[1]
-4562.5mΩ
V
BEsat
base-emitter
saturation voltage
I
C
=1A; I
B
=100mA
[1]
- 0.75 0.9 V
I
C
=4A; I
B
=400mA
[1]
- 0.92 1.05 V
V
BEon
base-emitter turn-on
voltage
V
CE
=2V; I
C
=2A
[1]
- 0.77 0.85 V
t
d
delay time V
CC
=12.5V; I
C
=1A;
I
Bon
=0.05A;
I
Boff
= −0.05 A
-35-ns
t
r
rise time - 30 - ns
t
on
turn-on time - 65 - ns
t
s
storage time - 150 - ns
t
f
fall time - 65 - ns
t
off
turn-off time - 215 - ns
f
T
transition frequency V
CE
=10V;
I
C
= 100 mA;
f=100MHz
- 145 - MHz
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
-65-pF
PBSS4032NZ_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 31 March 2010 7 of 15
NXP Semiconductors
PBSS4032NZ
30 V, 4.9 A NPN low V
CEsat
(BISS) transistor
V
CE
=2V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 5. DC current gain as a function of collector
current; typical values
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
V
CE
=2V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
Fig 8. Base-emitter saturation voltage as a function
of collector current; typical values
006aac136
400
600
200
800
1000
h
FE
0
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(3)
(2)
V
CE
(V)
0.0 5.04.02.0 3.01.0
006aac137
4.0
8.0
12.0
I
C
(A)
0.0
I
B
(mA) = 70
63
56
49
42
35
28
21
14
7
006aac138
0.4
0.8
1.2
V
BE
(V)
0.0
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(3)
(2)
006aac139
0.5
0.9
1.3
V
BEsat
(V)
0.1
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(3)
(2)
PBSS4032NZ_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 31 March 2010 8 of 15
NXP Semiconductors
PBSS4032NZ
30 V, 4.9 A NPN low V
CEsat
(BISS) transistor
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
006aac140
I
C
(mA)
10
−1
10
4
10
3
110
2
10
10
−1
1
V
CEsat
(V)
10
−2
(1)
(3)
(2)
006aac141
I
C
(mA)
10
−1
10
4
10
3
110
2
10
10
−1
1
V
CEsat
(V)
10
−2
(1)
(3)
(2)
I
C
(mA)
10
−1
10
4
10
3
110
2
10
006aac142
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(1)
(2)
(3)
I
C
(mA)
10
−1
10
4
10
3
110
2
10
006aac143
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(1)
(2)
(3)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PBSS4032NZ,115

Mfr. #:
Buy PBSS4032NZ,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT Single NPN 30V 4.9A 700mW 145MHz
Lifecycle:
New from this manufacturer.
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