PC4H520NIP

P1-P3 P4-P6 P7-P9 P10-P12

Sheet No.: D2-A02801EN

■ Electro-optical Characteristics

Parameter Conditions

Forward voltage

Reverse current

Terminal capacitance

Collector dark current

Transfer

charac-

teristics

Current transfer ratio

Collector-emitter saturation voltage

Collector-emitter breakdown voltage

Isolation resistance

MIN.

−

−

−

−

−

5×10

10

−

TYP.

1.2

−

30

−

−

−

1×10

11

20

MAX.

1.4

10

250

200

−

1.4

−

100

Unit

V

V

µA

pF

µA

mA10 40 120

V

Ω

µs

µs

Symbol

V

F

I

R

C

t

I

CEO

BV

CEO

I

C

V

CE (sat)

R

ISO

t

f

Response time

Rise time

Fall time

Input

Output

I

F

=10mA

V

R

=4V

V=0, f=1kHz

V

CE

=200V, I

F

=0

I

C

=0.1mA, I

F

=0

I

F

=1mA, V

CE

=2V

DC500V, 40 to 60%RH

V

CE

=2V, I

C

=20mA, R

L

=100Ω

− 100 300t

r

Cut-off frequency 1 7 −f

C

kHzV

CE

=2V, I

C

=20mA, R

L

=100Ω −3dB

Floating capacitance − 0.6 1.0C

f

pFV=0, f=1MHz

I

F

=20mA, I

C

=100mA

350

(T

a

=25˚C)

■ Absolute Maximum Ratings

(T

a

=25˚C)

Parameter Symbol Unit

Input

Forward current mA

*2

*1

*1

*1

Peak forward current A

Power dissipation mW

Output

Collector-emitter voltage

V

Emitter-collector voltage

V

Collector current mA

Collector power dissipation

mW

Total power dissipation mW

*3

Isolation voltage

Operating temperature ˚C

Storage temperature ˚C

*4

Soldering temperature

I

F

I

FM

P

V

CEO

V

ECO

I

C

P

C

P

tot

V

iso (rms)

T

opr

T

stg

T

sol

˚C

*1 Mounted glass epoxy PCB (Size : 20mm×20mm×1.6mm)

*2 Pulse width≤100µs, Duty ratio : 0.001

*3 40 to 60%RH, AC for 1 minute, f=60Hz

*4 For 10s

Rating

50

1

70

Reverse voltage VV

R

6

350

0.1

120

180

210

−40 to +100

−55 to +125

260

2.5 kV

4

PC4H520NIP

Sheet No.: D2-A02801EN

Total power dissipation P

tot

(mW)

0

50

100

150

250

200

210

−40 0 25 50 75 100 125

Ambient temperature T

a

(˚C)

Fig.4 Total Power Dissipation vs. Ambient

Temperature

Pulse width≤100µs

T

a

=25˚C

Peak forward current I

FM

(mA)

10

20

50

100

200

2 000

500

1 000

5210

−3

5210

−2

5210

−1

5 1

Duty ratio

Fig.5 Peak Forward Current vs. Duty Ratio

Forward current I

F

(mA)

0

10

20

30

40

50

−40 0 25 75 100 1255550

Ambient temperature T

a

(˚C)

Fig.1 Forward Current vs. Ambient

Temperature

0

20

40

60

70

80

100

−40 0 25 75 100 1255550

Ambient temperature T

a

(˚C)

Diode power dissipation P (mW)

Fig.2 Diode Power Dissipation vs. Ambient

Temperature

Collector power dissipation P

C

(mW)

0

50

100

150

200

180

−40 0 25 50 75 100 125

Ambient temperature T

a

(˚C)

Fig.3 Collector Power Dissipation vs.

Ambient Temperature

5

PC4H520NIP

0 0.5 1.0 1.5 2.0

1

10

100

0.1

Forward voltage V

F

(V)

Forward current I

F

(mA)

T

a

=100˚C

T

a

=25˚C

T

a

=0˚C

T

a

=−25˚C

T

a

=75˚C

T

a

=50˚C

Fig.6 Forward Current vs. Forward Voltage

Sheet No.: D2-A02801EN

0

150

Relative current transfer ratio (%)

Ambient temperature T

a

(˚C)

020406080100−40 −20

I

F

=1mA

V

CE

=2V

50

100

Fig.10 Relative Current Transfer Ratio vs.

Ambient Temperature

Fig.9 Collector Current vs. Forward Current

6

0

0

150

12345

50

100

Collector current I

C

(mA)

Collector-emitter voltage V

CE

(V)

T

a

=25˚C

I

F

=2.5mA

I

F

=2mA

I

F

=1.5mA

I

F

=1mA

I

F

=0.5mA

P

C

(MAX)

Fig.8 Collector Current vs. Collector-emitter

Voltage

Current transfer ratio C

TR

(%)

0

1 000

2 000

3 000

4 000

5 000

6 000

7 000

8 000

9 000

10 000

0.1 101

Forward current I

F

(mA)

V

CE

=2V

T

a

=25˚C

Fig.7 Current Transfer Ratio vs. Forward

Current

0.01

0.1 1 10

1

10

100

0.1

Collector current I

C

(mA)

Forward current I

F

(mA)

V

CE

=2V

T

a

=25˚C

PC4H520NIP

Collector dark current I

CEO

(A)

Ambient temperature T

a

(˚C)

−40

10

−11

10

−10

10

−9

10

−8

10

−7

10

−6

10

−5

V

CE

=200V

−20 0 20 40 60 80 100

Fig.11 Collector Dark Current vs. Ambient

Temperature

Fig.12 Collector Sayuration Voltage vs.

Ambient Temperature

25 50−25 0 75 100

Collector-emitter saturation voltage V

CE

(sat) (V)

Ambient temperature T

a

(˚C)

−50

0.0

0.5

1.0

1.5

2.0

2.5

I

F

=20mA

I

C

=100mA

P1-P3 P4-P6 P7-P9 P10-P12

PC4H520NIP

Mfr. #:

Manufacturer:

Sharp Microelectronics

Description:

OPTOISOLATOR 2.5KV DARL 4SMD

Lifecycle:

New from this manufacturer.

Delivery:

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Payment:

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PC4H520NIP