PM25RL1A120 Datasheet PM25RL1A120 | P1-P3

May 2009

1

MITSUBISHI <INTELLIGENT POWER MODULES>

PM25RL1A120

FLAT-BASE TYPE

INSULATED PACKAGE

PM25RL1A120

FEATURE

Inverter + Brake + Drive & Protection IC

a) Adopting new 5th generation Full-Gate CSTBT

TM

chip

b) The over-temperature protection which detects the chip sur-

face temperature of CSTBT

TM

is adopted.

c) Error output signal is possible from all each protection up-

per and lower arm of IPM.

d) Compatible L-series package.

•3φ 25A, 1200V Current-sense and temperature sense

IGBT type inverter

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for, short-

circuit, over-temperature & under-voltage (P-F

O available

from upper arm devices)

• UL Recognized

APPLICATION

General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES Dimensions in mm

106

19.75 66.5

3.25

7

16 15.25

2-φ5.5

6-M5 NUTS

MOUNTING HOLES

6-23-23-23-2

B

NP

UVW

10.75

(7)

12

(SCREWING DEPTH)

19-■0.5

32.75 23 23 23

13

3.15

55

32

27.5

(13.5)

3

16

17.5 17.5

(19.75)

12

14.5

1616

120

LABEL

11

1. VUPC

2. UFO

3. UP

4. VUP1

5. VVPC

6. VFO

7. VP

8. VVP1

9. VWPC

10. WFO

11. WP

12. VWP1

13. VNC

14. VN1

15. Br

16. UN

17. VN

18. WN

19. Fo

1591319

12

22

+

–

1

0.5

2-φ2.5

Te rminal code

11.75

MITSUBISHI <INTELLIGENT POWER MODULES>

PM25RL1A120

FLAT-BASE TYPE

INSULATED PACKAGE

May 2009

2

VCES

±IC

±ICP

PC

Tj

Collector-Emitter Voltage

Collector Current

Collector Current (Peak)

Collector Dissipation

Junction Temperature

V

D = 15V, VCIN = 15V

T

C = 25°C (Note-1)

T

C = 25°C

T

C = 25°C (Note-1)

V

A

W

°C

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)

INVERTER PART

Symbol Parameter Condition Ratings Unit

1200

25

50

128

–20 ~ +150

INTERNAL FUNCTIONS BLOCK DIAGRAM

VCES

IC

ICP

PC

IF

VR(DC)

Tj

BRAKE PART

Collector-Emitter Voltage

Collector Current

Collector Current (Peak)

Collector Dissipation

FWDi Forward Current

FWDi Rated DC Reverse Voltage

Junction Temperature

V

D = 15V, VCIN = 15V

T

C = 25°C (Note-1)

T

C = 25°C

T

C = 25°C (Note-1)

T

C = 25°C

T

C = 25°C

V

A

W

A

V

°C

Symbol Parameter Condition Ratings Unit

1200

25

50

128

25

1200

–20 ~ +150

V

FO

IFO

CONTROL PART

V

mA

20

Supply Voltage

Input Voltage

Fault Output Supply Voltage

Fault Output Current

Symbol

Parameter Condition Ratings Unit

Applied between : V

UP1-VUPC, VVP1-VVPC

VWP1-VWPC, VN1-VNC

Applied between : UP-VUPC, VP-VVPC, WP-VWPC

UN • VN • WN • Br-VNC

Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC

FO-VNC

Sink current at UFO, VFO, WFO, FO terminals

20

VD

VCIN

V

N

U

N

W

P

V

WP1

WF

O

V

WPC

V

P

V

VP1

VF

O

V

VPC

U

P

V

UP1

UF

O

V

UPC

Br

BNWVUP

Fo

1.5k

1.5k 1.5k 1.5k

V

NC

V

N1

W

N

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

*: TC measurement point is just under the chip.

MITSUBISHI <INTELLIGENT POWER MODULES>

PM25RL1A120

FLAT-BASE TYPE

INSULATED PACKAGE

May 2009

3

Parameter

Symbol

Supply Voltage Protected by

SC

Supply Voltage (Surge)

Storage Temperature

Isolation Voltage

Condition

V

CC(surge)

Tstg

Viso

Ratings

V

CC(PROT)

800

1000

–40 ~ +125

2500

Unit

V

°C

V

rms

V

D = 13.5 ~ 16.5V

Inverter Part, T

j = +125°C Start

Applied between : P-N, Surge value

60Hz, Sinusoidal, Charged part to Base, AC 1 min.

2.15

2.35

3.3

2.0

0.8

1.0

2.8

1.2

1

10

Min. Typ. Max.

Collector-Emitter Saturation

Voltage

Collector-Emitter Cutoff

Current

–I

C = 25A, VD = 15V, VCIN = 15V (Fig. 2)

T

j = 25°C

T

j = 125°C

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)

INVERTER PART

Parameter

Symbol

Condition

V

CE(sat)

ICES

VEC

ton

trr

tc(on)

toff

tc(off)

Limits

—

0.3

—

1.65

1.85

2.3

0.8

0.3

0.4

1.2

0.4

—

T

j = 25°C

T

j = 125°C

FWDi Forward Voltage

Switching Time

V

D = 15V, VCIN = 0V↔15V

V

CC = 600V, IC = 25A

T

j = 125°C

Inductive Load (Fig. 3,4)

V

CE

= V

CES

, V

D

= 15V

(Fig. 5)

V

D = 15V, IC = 25A

V

CIN = 0V, Pulsed (Fig. 1)

TOTAL SYSTEM

V

mA

V

µs

Unit

0.97

1.60

0.97

1.60

0.038

°C/W

Rth(j-c)Q

Rth(j-c)F

Rth(j-c)Q

Rth(j-c)F

Rth(c-f)

Inverter IGBT part (per 1 element) (Note-1)

Inverter FWDi part (per 1 element) (Note-1)

Brake IGBT part (Note-1)

Brake FWDi upper part (Note-1)

Case to fin, (per 1 module)

Thermal grease applied (Note-1)

Symbol

Condition

Unit

Min.

—

Junction to case Thermal

Resistances

THERMAL RESISTANCES

Contact Thermal Resistance

(Note-1) T

C (under the chip) measurement point is below.

Parameter

Limits

Typ. Max.

UP

IGBT

27.0

–7.0

VP WP UN VN WN BR

FWDi

27.0

–0.2

IGBT

66.9

–6.0

FWDi

66.9

0.8

IGBT

86.5

–6.0

FWDi

86.5

0.8

IGBT

39.2

4.0

FWDi

33.2

4.8

IGBT

54.3

4.0

FWDi

60.7

4.8

IGBT

73.9

4.0

FWDi

80.3

4.8

IGBT

20.0

–7.0

Di

21.8

5.8

arm

axis

X

Y

(unit : mm)

Bottom view

* If you use this value, Rth(f-a) should be measured just under the chips.

PM25RL1A120

PM25RL1A120

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