MPS3638A Datasheet MPS3638AG, MPS3638A | P1-P3

Switching Transistor

PNP Silicon

w This device is available in Pb−free package(s). Specifications herein

apply to both standard and Pb−free devices. Please see our website at

www.onsemi.com for specific Pb−free orderable part numbers, or

contact your local ON Semiconductor sales office or representative.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

CEO

−25 Vdc

Collector−Emitter Voltage V

CES

−25 Vdc

Collector−Base Voltage V

CBO

−25 Vdc

Emitter−Base Voltage V

EBO

−4.0 Vdc

Collector Current — Continuous I

C

−500 mAdc

Total Device Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

1.5

12

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient

R

q

JA

(1)

200 °C/W

Thermal Resistance, Junction to Case

R

q

JC

83.3 °C/W

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

C

= −100 mAdc, V

BE

= 0)

V

(BR)CES

−25 — Vdc

Collector−Emitter Sustaining Voltage

(2)

(I

C

= −10 mAdc, I

B

= 0)

V

CEO(sus)

−25 — Vdc

Collector−Base Breakdown Voltage

(I

C

= −100 mAdc, I

E

= 0)

V

(BR)CBO

−25 — Vdc

Emitter−Base Breakdown Voltage

(I

E

= −100 mAdc, I

C

= 0)

V

(BR)EBO

−4.0 — Vdc

Collector Cutoff Current

(V

CE

= −15 Vdc, V

BE

= 0)

(V

CE

= −15 Vdc, V

BE

= 0, T

A

= −65°C)

I

CES

—

−0.035

−2.0

mAdc

Emitter Cutoff Current

(V

EB

= −3.0 V, I

C

= 0)

I

EBO

— −35 nA

Base Current

(V

CE

= −15 Vdc, V

BE

= 0)

I

B

— −0.035

mAdc

1. R

q

JA

is measured with the device soldered into a typical printed circuit board.

2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

ON Semiconductort

March, 2006 − Rev. 2

1 Publication Order Number:

MPS3638A/D

MPS3638A

CASE 29−11, STYLE 1

TO−92 (TO−226AA)

1

2

3

COLLECTOR

3

2

BASE

1

EMITTER

MPS3638A

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted) (Continued)

Characteristic

Symbol Min Max Unit

ON CHARACTERISTICS

(2)

DC Current Gain

(I

C

= −1.0 mAdc, V

CE

= −10 Vdc)

(I

C

= −10 mAdc, V

CE

= −10 Vdc)

(I

C

= −50 mAdc, V

CE

= −1.0 Vdc)

(I

C

= −300 mAdc, V

CE

= −2.0 Vdc)

h

FE

80

100

20

—

Collector−Emitter Saturation Voltage

(I

C

= −50 mAdc, I

B

= −2.5 mAdc)

(I

C

= −300 mAdc, I

B

= −30 mAdc)

V

CE(sat)

—

−0.25

−1.0

Vdc

Base −Emitter Saturation Voltage

(I

C

= −50 mAdc, I

B

= −2.5 mAdc)

(I

C

= −300 mAdc, I

B

= −30 mAdc)

V

BE(sat)

—

−0.80

−1.1

−2.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain — Bandwidth Product

(V

CE

= −3.0 Vdc, I

C

= −50 mAdc, f = 100 MHz)

f

T

150 —

MHz

Output Capacitance

(V

CB

= −10 Vdc, I

E

= 0, f = 1.0 MHz)

C

obo

— 10

pF

Input Capacitance

(V

EB

= −0.5 Vdc, I

C

= 0, f = 1.0 MHz)

C

ibo

— 25

pF

Input Impedance

(I

C

= −10 mAdc, V

CE

= −10 Vdc, f = 1.0 kHz)

h

ie

— 2000

kΩ

Voltage Feedback Ratio

(I

C

= −10 mAdc, V

CE

= −10 Vdc, f = 1.0 kHz)

h

re

— 15

X 10

− 4

Small−Signal Current Gain

(I

C

= −10 mAdc, V

CE

= −10 Vdc, f = 1.0 kHz)

h

fe

100 —

—

Output Admittance

(I

C

= −10 mAdc, V

CE

= −10 Vdc, f = 1.0 kHz)

h

oe

— 1.2

mmhos

SWITCHING CHARACTERISTICS

Delay Time

(V

CC

= −10 Vdc, I

C

= −300 mAdc, I

B1

= −30 mAdc)

t

d

— 20 ns

Rise Time t

r

— 70 ns

Storage Time

(V

CC

= −10 Vdc, I

C

= −300 mAdc,

I

B1

= −30 mAdc, I

B2

= −30 mAdc)

t

s

— 140 ns

Fall Time t

f

— 70 ns

Turn−On Time (I

C

= −300 mAdc, I

B1

= −30 mAdc) t

on

— 75 ns

Turn−Off Time (I

C

= −300 mAdc, I

B1

= −30 mAdc, I

B2

= 30 mAdc) t

off

— 170 ns

2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

MPS3638A

http://onsemi.com

3

Figure 1. Turn−On Time Figure 2. Turn−Off Time

SWITCHING TIME EQUIVALENT TEST CIRCUIT

Scope rise time < 4.0 ns

*Total shunt capacitance of test jig connectors, and oscilloscope

+2 V

−16 V

10 to 100 μs,

DUTY CYCLE = 2%

0

1.0 kΩ

−30 V

200 Ω

C

S

* < 10 pF

1.0 kΩ

−30 V

200 Ω

C

S

* < 10 pF

+4.0 V

< 2 ns

1.0 to 100 μs,

DUTY CYCLE = 2%

< 20 ns

+14 V

0

−16 V

Figure 3. Capacitances

REVERSE VOLTAGE (VOLTS)

7.0

10

20

30

5.0

Figure 4. Charge Data

I

C

, COLLECTOR CURRENT (mA)

0.1 2.0 5.0 10

20

2.0

30

CAPACITANCE (pF)

Q, CHARGE (nC)

2.0

3.0

5.0

7.0

10

1.0

10 20 50 70 100

200

0.1

300

500

0.7

0.5

V

CC

= 30 V

I

C

/I

B

= 10

C

eb

Q

T

Q

A

25°C 100°C

TRANSIENT CHARACTERISTICS

3.01.00.50.30.2

0.3

0.2

30

C

cb

0.7 7.0

MPS3638A

MPS3638A

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