IXGR50N60C2D1 Datasheet IXGR50N60C2, IXGR50N60C2D1 | P1-P3

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

V

GE(th)

I

C

= 250A, V

CE

= V

GE

3.0 5.5 V

I

CES

V

CE

= V

CES

, V

GE

= 0V 650 A

T

J

= 125C 5 mA

I

GES

V

CE

= 0V, V

GE

= 20V 100 nA

V

CE(sat)

I

C

= 40A, V

GE

= 15V, Note 1 2.7 V

T

J

= 125C 1.8 V

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25C to 150C 600 V

V

CGR

T

J

= 25C to 150C, R

GE

= 1M 600 V

V

GES

Continuous 20 V

V

GEM

Transient 30 V

I

C25

T

C

= 25C (Limited by Leads) 75 A

I

C110

T

C

= 110C36A

I

CM

T

C

= 25C, 1ms 300 A

SSOA V

GE

= 15V, T

VJ

= 125C, R

G

= 10 I

CM

= 100 A

(RBSOA) Clamped Inductive Load V

CE

 V

CES

P

C

T

C

= 25C 200 W

T

J

-55 ... +150 C

T

JM

150 C

T

stg

-55 ... +150 C

V

ISOL

50/60 Hz, RMS, t = 1minute 2500 V~

F

C

Mounting Force 20..120/4.5..27 N/lb

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6mm (0.062 in.) from Case for 10s 260 °C

Weight 5 g

DS99163A(02/14)

V

CES

= 600V

I

C110

= 36A

V

CE(sat)



£ 2.7V

t

fi(typ)

= 48ns

IXGR50N60C2

IXGR50N60C2D1

Features



Silicon Chip on Direct-Copper Bond

(DCB) Substrate



Isolated Mounting Surface



2500V Electrical Isolation



Very High Frequency IGBT



Square RBSOA



Anti-Parallel Ultra Fast Diode



High Current Handling Capability

Advantages



High Power Density



Low Gate Drive Requirement

Applications



Switch-Mode and Resonant-Mode

Power Supplies



Uninterruptible Power Supplies (UPS)



PFC Circuits



AC Motor Drives



DC Servo & Robot Drives



DC Choppers

ISOPLUS247

TM

G

C

E

G = Gate C = Collector

E = Emitter

Isolated Tab

HiPerFAST

TM

High Speed IGBT

C2-Class w/ Diode

IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions.

IXGR50N60C2

IXGR50N60C2D1

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 40A, V

CE

= 10V, Note 1 40 51 S

C

ie

s

3700 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 290 pF

C

res

50 pF

Q

g(on)

138 nC

Q

ge

I

C

= 40A, V

GE

= 15V, V

CE

= 0.5 • V

CES

25 nC

Q

gc

40 nC

t

d(on)

18 ns

t

ri

25 ns

t

d(off)

115 150 ns

t

fi

48 ns

E

of

f

0.38 0.70 mJ

t

d(on)

18 ns

t

ri

25 ns

E

on

1.4 mJ

t

d(off)

170 ns

t

fi

60 ns

E

off

0.74 mJ

R

thJC

0.62 °C/W

R

thCS

0.15 °C/W

Inductive load, T

J

= 25°C

I

C

= 40A, V

GE

= 15V

V

CE

= 0.8 • V

CES

, R

G

= 2

Note 2

Inductive load, T

J

= 125°C

I

C

= 40A, V

GE

= 15V

V

CE

= 0.8 • V

CES

, R

G

= 2

Note 2

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

V

F

I

F

= 60A, V

GE

= 0V, Note 1 2.1 V

T

J

= 150C 1.4 V

I

RM

I

F

= 60A, V

GE

= 0V, -di

F

/dt = 100A/sT

J

= 100C 8.3 A

V

R

= 100 V

t

rr

I

F

= 1A, -di/dt = 200A/s, V

R

= 30V 35 ns

R

thJC

0.85 ºC/W

Reverse Diode (FRED)

ISOPLUS247 (IXGR) Outline

1 - Gate

2 - Collector

3 - Emitter

IXGR50N60C2

IXGR50N60C2D1

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter voltage

2.4

2.7

3.0

3.3

3.6

3.9

4.2

4.5

4.8

57911131517

V

G E

- Volts

V

C E

- Volts

T

J

= 25ºC

I

C

= 80

A

40

A

20

A

Fig. 6. Input Admittance

0

40

80

120

160

200

456789

V

G E

- Volts

I

C

- Amperes

T

J

= 125

º

C

25

º

C

Fig. 2. Extended Output Characteristics

@ T

J

= 25ºC

0

40

80

120

160

200

240

280

320

0246810

V

C E

- Volts

I

C

- Amperes

V

GE

= 15V

13V

5V

7V

9V

11V

Fig. 3. Output Characteristics

@ T

J

= 125ºC

0

10

20

30

40

50

60

70

80

0.5 1 1.5 2 2.5 3 3.5 4

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

6V

5V

7V

9V

Fig. 1. Output Characteristics

@ T

J

= 25ºC

0

10

20

30

40

50

60

70

80

0.5 1 1.5 2 2.5 3 3.5 4

V

C E

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

5V

6V

9V

Fig. 4. Dependence of V

CE(sat)

on Temperature

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

25 50 75 100 125 150

T

J

- Degrees Centigrade

V

C E ( s a t )

- Normalized

I

C

= 40A

I

C

= 20A

V

GE

= 15V

I

C

= 80A

IXGR50N60C2D1

IXGR50N60C2D1

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