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IXGR50N60C2D1

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions.
IXGR50N60C2
IXGR50N60C2D1
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
0 50 100 150 200
I
C
- Amperes
g
f s
- Siemens
T
J
= 25
º
C
125
º
C
Fig. 8. Dependence of Turn-Off
Energy on R
G
0.0
0.6
1.2
1.8
2.4
3.0
2 4 6 8 10 12 14 16 18
R
G
- Ohms
E
o f f
- milliJoules
I
C
= 20A
T
J
= 125ºC
V
GE
= 15V
V
CE
= 480V
I
C
= 40A
I
C
= 80A
Fig. 9. Dependence of Turn-Off
En e r g y
on I
c
0
0.4
0.8
1.2
1.6
2
20 30 40 50 60 70 80
I
C
- Amperes
E
o f f
- MilliJoules
R
G
= 2Ω
R
G
= 10Ω
- - - -
V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Dependence of Turn-Off
Energy on Temperature
0
0.4
0.8
1.2
1.6
2
2.4
25 50 75 100 125
T
J
- Degrees Centigrade
E
o f f
- milliJoules
I
C
= 80A
R
G
= 2Ω
R
G
= 10Ω
- - - -
V
GE
= 15V
V
CE
= 480V
I
C
= 40A
I
C
= 20A
Fig. 11. Dependence of Turn-Off
Switching Time on R
G
50
15 0
250
350
450
2 4 6 8 10 12 14 16 18
R
G
- Ohms
Switching Time - nanoseconds
I
C
= 20A
t
d(off)
t
fi
-
- - - - -
T
J
= 125ºC
V
GE
= 15V
V
CE
= 480V
I
C
= 40A
I
C
= 80A
Fig. 12. Dependence of Turn-Off
Switching Time
on I
c
40
80
120
160
200
20 30 40 50 60 70 80
I
C
- Amperes
Switching Time - nanoseconds
t
d(off)
t
fi
- - - - -
R
G
= 2Ω
V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
© 2014 IXYS CORPORATION, All Rights Reserved
IXGR50N60C2
IXGR50N60C2D1
Fig. 15. Gate Charge
0
2
4
6
8
10
12
14
16
0 30 60 90 120 150
Q
G
- nanoCoulombs
V
G E
- Volts
V
CE
= 300V
I
C
= 40A
I
G
= 10mA
Fig. 16. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
C E
- Volts
Capacitance - picoFarrads
C
ies
C
oes
C
res
f = 1 MHz
Fig. 13. Dependence of Turn-Off Switching
Time on Temperature
20
40
60
80
100
120
140
160
180
200
25 50 75 100 125
T
J
- Degrees Centigrade
Switching Time - nanoseconds
I
C
= 80A
t
d(off)
t
fi
-
- - - -
R
G
= 2Ω
V
GE
= 15V
V
CE
= 480V
I
C
= 20A
I
C
= 40A
I
C
= 20A
Fig. 14. Reverse-Bias
Safe Operating Area
0
10
20
30
40
50
60
70
80
90
100 200 300 400 500 600
V
C E
- Volts
I
C
- Amperes
T
J
= 125
º
C
R
G
= 10Ω
dv/dt <
Fig. 17. Maximum Transient Thermal Resistance
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
1 10 100 1000
Pulse Width - milliseconds
Z
( t h ) J C
-
ºC / W
IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions.
IXGR50N60C2
IXGR50N60C2D1
IXYS REF: G_50N60C2(62) 2-18-04
Fig. 24 Transient thermal resistance junction to case
I
F
=120A
I
F
= 60A
I
F
= 30A
T
VJ
= 100°C
V
R
= 300V
T
VJ
= 100°C
I
F
= 60A
Fig. 20 Peak reverse current I
RM
versus -di
F
/dt
Fig. 19 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 18 Forward current I
F
versus V
F
T
VJ
= 100°C
V
R
= 300V
T
VJ
= 100°C
V
R
= 300V
I
F
=120A
I
F
= 60A
I
F
= 30A
Q
r
I
RM
Fig. 21 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 22 Recovery time t
rr
versus -di
F
/dt
Fig. 23 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
I
F
=120A
I
F
= 60A
I
F
= 30A
t
fr
V
FR
Fig. 24 Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
1 0.3073 0.0055
2 0.3533 0.0092
3 0.0887 0.0007
4 0.1008 0.0399
T
VJ
= 25°C
T
VJ
=150°C
T
VJ
=100°C
200 600 10000 400 800
80
90
100
110
120
130
140
0.00001 0.0001 0.001 0.01 0.1 1
0.0001
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
°C
-di
F
/dt
t
s
K/W
0 200 400 600 800 1000
0
5
10
15
20
0.0
0.4
0.8
1.2
1.6
V
FR
di
F
/dt
V
200 600 10000 400 800
0
20
40
60
80
100 1000
0
1000
2000
3000
4000
012
0
20
40
60
80
100
120
140
160
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/s
A
V
nC
A/s
A/s
t
rr
ns
t
fr
A/s
s
DSEP 2x61-06A
Z
thJC
P1-P3P4-P6

IXGR50N60C2D1

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IGBT 600V 75A 200W ISOPLUS247
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