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PMBT3946YPN,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
PMBT3946YPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 12 May 2009 9 of 15
NXP Semiconductors
PMBT3946YPN
40 V, 200 mA NPN/PNP general-purpose double transistor
V
CE
= −1V
(1) T
amb
= 150 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 8. TR2 (PNP): DC current gain as a function of
collector current; typical values
Fig 9. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
V
CE
= −1V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 150 °C
I
C
/I
B
=10
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 150 °C
Fig 10. TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
Fig 11. TR2 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
006aab120
200
100
300
400
h
FE
0
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
(1)
(2)
(3)
V
CE
(V)
0 −10−8−4 −6−2
006aab121
−0.1
−0.2
−0.3
I
C
(A)
0
I
B
(mA) = −5.0
−4.5
−4.0
−3.5
−3.0
−0.5
−1.0
−2.5
−1.5
−2.0
006aab123
−0.6
−0.8
−0.4
−1.0
−1.2
V
BE
(V)
−0.2
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
(1)
(2)
(3)
006aab124
−0.6
−0.8
−0.4
−1.0
−1.2
V
BEsat
(V)
−0.2
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
(1)
(2)
(3)
PMBT3946YPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 12 May 2009 10 of 15
NXP Semiconductors
PMBT3946YPN
40 V, 200 mA NPN/PNP general-purpose double transistor
8. Test information
I
C
/I
B
=10
(1) T
amb
= 150 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
Fig 12. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current;
typical values
006aab122
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
−10
−1
−1
V
CEsat
(V)
−10
−2
(1)
(2)
(3)
Fig 13. TR1 (NPN): Test circuit for switching times
R
C
R2
R1
DUT
mlb826
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC
PMBT3946YPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 12 May 2009 11 of 15
NXP Semiconductors
PMBT3946YPN
40 V, 200 mA NPN/PNP general-purpose double transistor
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
Fig 14. TR2 (PNP): Test circuit for switching times
R
C
R2
R1
DUT
mgd624
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC
Fig 15. Package outline SOT363 (SC-88)
06-03-16Dimensions in mm
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0
1.35
1.15
2.2
1.8
1.1
0.8
0.45
0.15
132
465
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
PMBT3946YPN SOT363 4 mm pitch, 8 mm tape and reel; T1
[2]
-115 -135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125 -165
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PMBT3946YPN,115

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Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT GENERAL PURPOSE TRANSISTOR
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