January 2010 Doc ID 3540 Rev 3 1/10
10
MJD112
MJD117
Complementary power Darlington transistors
Features
Good h
FE
linearity
High f
T
frequency
Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Application
Linear and switching industrial equipment
Description
The devices are manufactured in planar
technology with “base island” layout and
monolithic Darlington configuration.
.
Figure 1. Internal schematic diagram
TO-252
1
3
TA B
(DPAK)
R
1
typ. = 15 kΩ
R
2
typ. = 100 Ω
Table 1. Device summary
Order codes Marking Polarity Package Packaging
MJD112T4 MJD112 NPN DPAK Tape and reel
MJD117T4 MJD117 PNP DPAK Tape and reel
www.st.com
Absolute maximum ratings MJD112, MJD117
2/10 Doc ID 3540 Rev 3
1 Absolute maximum ratings
Note: For PNP types voltage and current values are negative.
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CBO
Collector-base voltage (I
E
= 0)
100 V
V
CEO
Collector-emitter voltage (I
B
= 0)
V
EBO
Emitter-base voltage (I
C
= 0) 5 V
I
C
Collector current 2 A
I
CM
Collector peak current 4 A
I
B
Base current 0.05 A
P
TOT
Total dissipation at T
case
= 25 °C 20 W
T
STG
Storage temperature -65 to 150 °C
T
J
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case max. 6.25 °C/W
MJD112, MJD117 Electrical characteristics
Doc ID 3540 Rev 3 3/10
2 Electrical characteristics
T
case
= 25 °C; unless otherwise specified.
Note: For PNP types voltage and current values are negative.
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CEV
Collector cut-off current
(V
BE
= -1.5 V)
V
CE
= 80 V
V
CE
= 80 V, T
c
= 125 °C
-
10
0.5
µA
mA
I
CBO
Collector cut-off current
(I
E
= 0)
V
CB
= 80 V
V
CB
= 100 V
-
10
20
µA
I
CEO
Collector cut-off current
(I
B
= 0)
V
CE
= 50 V - 20 µA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 5 V - 2 mA
V
CEO(sus)
(1)
1. Pulse test: pulse duration 300 µs, duty cycle 2 %
Collector-emitter
sustaining voltage (I
B
= 0)
I
C
= 30 mA 100 - V
V
CE(sat)
(1)
Collector-emitter saturation
voltage
I
C
= 2 A I
B
= 8 mA - 2
V
I
C
= 4 A I
B
= 40 mA - 3
V
BE(sat)
(1)
Base-emitter saturation
voltage
I
C
= 4 A I
B
= 40 mA - 4 V
V
BE(on)
Base-emitter on voltage I
C
= 2 A V
CE
= 3 V - 2.8 V
h
FE
(1)
DC current gain
I
C
= 0.5 A_ _ V
CE
= 3 V 500 -
I
C
= 2 A_ V
CE
= 3 V 1000 - 12000
I
C
= 4 A_ _ V
CE
= 3 V 200 -
f
T
Transition frequency
I
C
= 0.75 A_ V
CE
= 10 V
f = 1 MHz
25 - MHz
C
CBO
Collector base capacitance
(I
E
= 0)
V
CB
= 10 V f = 0.1 MHz
for MJD112
for MJD117
- 100
200
pF
pF

MJD112T4

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Darlington Transistors NPN Power Darlington
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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