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MJD112T4

P1-P3P4-P6P7-P9P10-P10
Electrical characteristics MJD112, MJD117
4/10 Doc ID 3540 Rev 3
2.1 Typical characteristic (curves)
Figure 2. DC current gain
(V
CE
= 3 V NPN)
Figure 3. DC current gain
(V
CE
= - 3 V PNP)
Figure 4. DC current gain
(V
CE
= 5 V NPN)
Figure 5. DC current gain
(V
CE
= - 5 V PNP)
Figure 6. Collector-emitter saturation
voltage (NPN)
Figure 7. Collector-emitter saturation
voltage (PNP)
MJD112, MJD117 Electrical characteristics
Doc ID 3540 Rev 3 5/10
Figure 8. Base-emitter saturation
voltage (NPN)
Figure 9. Base-emitter saturation
voltage (PNP)
Figure 10. Base-emitter on voltage
(NPN)
Figure 11. Base-emitter on voltage
(PNP)
Figure 12. Resistive load switching time
(NPN, on)
Figure 13. Resistive load switching time
(PNP, on)
Electrical characteristics MJD112, MJD117
6/10 Doc ID 3540 Rev 3
Figure 14. Resistive load switching time
(NPN, off)
Figure 15. Resistive load switching time
(PNP, off)
P1-P3P4-P6P7-P9P10-P10

MJD112T4

Mfr. #:
Buy MJD112T4
Manufacturer:
STMicroelectronics
Description:
Darlington Transistors NPN Power Darlington
Lifecycle:
New from this manufacturer.
Delivery:
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