Nexperia
PBSS5360X
60 V, 3 A PNP low VCEsat (BISS) transistor
PBSS5360X All information provided in this document is subject to legal disclaimers.
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Nexperia B.V. 2017. All rights reserved
Product data sheet 3 July 2017 4 / 12
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - - 250 K/W
[2] - - 132 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[3] - - 93 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
006aac680
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
- 1
10
- 5
1010
- 2
10
- 4
10
2
10
- 1
t
p
(s)
10
- 3
10
3
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac681
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
- 1
10
- 5
1010
- 2
10
- 4
10
2
10
- 1
t
p
(s)
10
- 3
10
3
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
FR4 PCB, mounting pad for collector 1 cm
2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
