Nexperia
PBSS5360X
60 V, 3 A PNP low VCEsat (BISS) transistor
PBSS5360X All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 3 July 2017 8 / 12
aaa-011001
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
-10
-1
-1
V
CEsat
(V)
-10
-2
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
aaa-011002
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
06-08-29Dimensions in mm
4.6
4.4
1.8
1.4
1.6
1.4
1.2
0.8
3
1.5
0.48
0.35
0.44
0.23
0.53
0.40
2.6
2.4
4.25
3.75
1 2 3
Fig. 11. Package outline SOT89
