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SI4554DY-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P14
Vishay Siliconix
Si4554DY
Document Number: 63660
S11-2527-Rev. A, 26-Dec-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N- and P-Channel 40 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Motor Drive
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W (n-channel) and 110 °C/W (p-channel).
e. Package limited.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
a
Q
g
(Typ.)
N-Channel 40
0.024 at V
GS
= 10 V
8
e
6.5
0.026 at V
GS
= 8 V
8
e
0.027 at V
GS
= 4.5 V
8
P-Channel - 40
0.027 at V
GS
= - 10 V
- 8
e
21.7
0.028 at V
GS
= - 8 V
- 8
e
0.034 at V
GS
= - 4.5 V
- 7.5
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information:
Si4554DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
1
G
1
S
1
S
2
G
2
D
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage
V
DS
40 - 40
V
Gate-Source Voltage
V
GS
± 20 ± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
8
e
- 8
e
A
T
C
= 70 °C
6.8
- 6.8
T
A
= 25 °C
6.8
b, c
- 6.6
b, c
T
A
= 70 °C
5.4
b, c
- 5.3
b, c
Pulsed Drain Current (10 µs Pulse Width)
I
DM
40 - 40
Source-Drain Current Diode Current
T
C
= 25 °C
I
S
2.6 - 2.6
T
A
= 25 °C
1.6
b, c
- 1.6
b, c
Pulsed Source-Drain Current
I
SM
40 - 40
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
10 - 20
Single Pulse Avalanche Energy
E
AS
520mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
3.1 3.2
W
T
C
= 70 °C
22.1
T
A
= 25 °C
2
b, c
2
b, c
T
A
= 70 °C
1.28
b, c
1.28
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol
N-Channel P-Channel
Unit
Typ. Max. Typ. Max.
Maximum Junction-to-Ambient
b, d
t ≤ 10 s
R
thJA
50 62.5 47 62.5
°C/W
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
30 40 29 38
www.vishay.com
2
Document Number: 63660
S11-2527-Rev. A, 26-Dec-11
Vishay Siliconix
Si4554DY
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min.
Typ.
a
Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
N-Ch 40
V
V
GS
= 0 V, I
D
= - 250 µA
P-Ch - 40
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= 250 µA
N-Ch 40
mV/°C
I
D
= - 250 µA
P-Ch - 34
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
I
D
= 250 µA
N-Ch - 4.1
I
D
= - 250 µA
P-Ch 5
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
N-Ch 1 2.2
V
V
DS
= V
GS
, I
D
= - 250 µA
P-Ch - 1.2 - 2.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
N-Ch ± 100
nA
V
DS
= 0 V, V
GS
= ± 20 V
P-Ch ± 100
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40 V, V
GS
= 0 V
N-Ch 1
µA
V
DS
= - 40 V, V
GS
= 0 V
P-Ch - 1
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
N-Ch 10
V
DS
= - 40 V, V
GS
= 0 V, T
J
= 55 °C
P-Ch - 10
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
N-Ch 20
A
V
DS
= - 5 V, V
GS
= - 10 V
P-Ch - 20
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 6.8 A
N-Ch 0.020 0.024
Ω
V
GS
= - 10 V, I
D
= - 8 A
P-Ch 0.021 0.027
V
GS
= 8 V, I
D
= 6.7 A
N-Ch 0.021 0.026
V
GS
= - 8 V, I
D
= - 6.5 A
P-Ch 0.022 0.028
V
GS
= 4.5 V, I
D
= 6.6 A
N-Ch 0.022 0.027
V
GS
= - 4.5 V, I
D
= - 5 A
P-Ch 0.027 0.034
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 6.8 A
N-Ch 27
S
V
DS
= - 15 V, I
D
= - 6.7 A
P-Ch 25
Dynamic
a
Input Capacitance
C
iss
N-Channel
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
P-Channel
V
DS
= - 20 V, V
GS
= 0 V, f = 1 MHz
N-Ch 690
pF
P-Ch 2000
Output Capacitance
C
oss
N-Ch 115
P-Ch 240
Reverse Transfer Capacitance
C
rss
N-Ch 41
P-Ch 202
Total Gate Charge
Q
g
V
DS
= 20 V, V
GS
= 10 V, I
D
= 10 A
N-Ch 13.3 20
nC
V
DS
= - 20 V, V
GS
= - 10 V, I
D
= - 10 A
P-Ch 41.5 63
N-Channel
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 10 A
P-Channel
V
DS
= - 20 V, V
GS
= - 4.5 V, I
D
= - 10 A
N-Ch 6.5 10
P-Ch 21.7 33
Gate-Source Charge
Q
gs
N-Ch 2.3
P-Ch 5.6
Gate-Drain Charge
Q
gd
N-Ch 1.7
P-Ch 9.8
Gate Resistance
R
g
f = 1 MHz
N-Ch 0.3 1.3 2.6
Ω
P-Ch 1.3 6.4 12.8
Document Number: 63660
S11-2527-Rev. A, 26-Dec-11
www.vishay.com
3
Vishay Siliconix
Si4554DY
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min.
Typ.
a
Max. Unit
Dynamic
a
Tu r n - On D e lay T i m e
t
d(on)
N-Channel
V
DD
= 20 V, R
L
= 3.7 Ω
I
D
≅ 5.4 A, V
GEN
= 10 V, R
g
= 1 Ω
P-Channel
V
DD
= - 20 V, R
L
= 2 Ω
I
D
≅ - 10 A, V
GEN
= - 10 V, R
g
= 1 Ω
N-Ch 5 10
ns
P-Ch 10 20
Rise Time
t
r
N-Ch 10 20
P-Ch 9 18
Turn-Off Delay Time
t
d(off)
N-Ch 16 25
P-Ch 50 90
Fall Time
t
f
N-Ch 7 14
P-Ch 13 26
Tu r n - On D e lay T i m e
t
d(on)
N-Channel
V
DD
= 20 V, R
L
= 3.7 Ω
I
D
≅ 5.4 A, V
GEN
= 4.5 V, R
g
= 1 Ω
P-Channel
V
DD
= - 20 V, R
L
= 2 Ω
I
D
≅ - 10 A, V
GEN
= - 4.5 V, R
g
= 1 Ω
N-Ch 11 22
P-Ch 42 75
Rise Time
t
r
N-Ch 12 22
P-Ch 40 70
Turn-Off Delay Time
t
d(off)
N-Ch 17 26
P-Ch 40 70
Fall Time
t
f
N-Ch 7 14
P-Ch 18 35
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
N-Ch 2.6
A
P-Ch - 2.6
Pulse Diode Forward Current
a
I
SM
N-Ch 40
P-Ch - 40
Body Diode Voltage
V
SD
I
S
= 5.4 A
N-Ch 0.81 1.2
V
I
S
= - 2 A
P-Ch - 0.77 - 1.2
Body Diode Reverse Recovery Time
t
rr
N-Channel
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
P-Channel
I
F
= - 5 A, dI/dt = - 100 A/µs, T
J
= 25 °C
N-Ch 17 34
ns
P-Ch 41 80
Body Diode Reverse Recovery Charge
Q
rr
N-Ch 10 20
nC
P-Ch 32 65
Reverse Recovery Fall Time
t
a
N-Ch 10
ns
P-Ch 15
Reverse Recovery Rise Time
t
b
N-Ch 7
P-Ch 26
P1-P3P4-P6P7-P9P10-P12P13-P14

SI4554DY-T1-GE3

Mfr. #:
Buy SI4554DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -40V Vds 20V Vgs SO-8 N&P PAIR
Lifecycle:
New from this manufacturer.
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