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SI4554DY-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P14
www.vishay.com
4
Document Number: 63660
S11-2527-Rev. A, 26-Dec-11
Vishay Siliconix
Si4554DY
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
10
20
30
40
0 0.5 1 1.5 2
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
V
GS
= 3 V
0.015
0.020
0.025
0.030
0.035
0 10 20 30 40
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 8 V
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 3 6 9 12 15
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 10 V
V
DS
= 20 V
V
DS
= 32 V
I
D
= 6.8 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0 0.6 1.2 1.8 2.4 3
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 6.8 A
V
GS
= 10 V; 4.5 V
Document Number: 63660
S11-2527-Rev. A, 26-Dec-11
www.vishay.com
5
Vishay Siliconix
Si4554DY
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0 0.3 0.6 0.9 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0.7
1
1.3
1.6
1.9
- 50 - 25 0 5025 75 100 125 150
V
GS(th)
(V)
T
J
- Temperature (°C)
I
D
= 250 μA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.01
0.02
0.03
0.04
0.05
0 2 4 6 8 10
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 6.8 A
0
12
24
36
48
60
011100.00.01
Time (s)
Power (W)
0.1
Safe Operating Area, Junction-to-Ambient
0.01
0.1
1
10
100
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
100 ms
Limited by R
DS(on)
*
1 ms
T
A
= 25 °C
Single Pulse
BVDSS Limited
10 ms
100 μs
1 s
DC
10 s
www.vishay.com
6
Document Number: 63660
S11-2527-Rev. A, 26-Dec-11
Vishay Siliconix
Si4554DY
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
10
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Foot
0
1
2
3
4
0 25 50 75 100 125 150
Power (W)
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Ambient
0.0
0.25
0.50
0.75
1.0
1.25
0 25 50 75 100 125 150
Power (W)
T
A
- Ambient Temperature (°C)
P1-P3P4-P6P7-P9P10-P12P13-P14

SI4554DY-T1-GE3

Mfr. #:
Buy SI4554DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -40V Vds 20V Vgs SO-8 N&P PAIR
Lifecycle:
New from this manufacturer.
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