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DMC31D5UDJ-7

P1-P3P4-P6P7-P9
DMC31D5UDJ
Document number: DS36799 Rev. 2 - 2
1 of 9
www.diodes.com
June 2014
© Diodes Incorporated
DMC31D5UDJ
NEW PRODUCT
ADVANCE INFORMATION
ADVANCE INFORMATION
NEW PRODUCT
NEW PRODUCT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
Q1 30V
1.5 @ V
GS
= 4.5V
0.22A
2.0 @ V
GS
= 2.5V
3.0 @ V
GS
= 1.8V
4.5 @ V
GS
= 1.5V
Q2 -30V
5 @ V
GS
= -4.5V
-0.2A
6 @ V
GS
= -2.5V
7 @ V
GS
= -1.8V
10 @ V
GS
= -1.5V
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
• General Purpose Interfacing Switch
• Power Management Functions
• Analog Switch
Features and Benefits
• Low On-Resistance
• Very low Gate Threshold Voltage, 1.0V max
• Low Input Capacitance
• Fast Switching Speed
• Ultra-Small Surface Mount Package 1mm x 1mm
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: SOT963
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See Diagram
• Terminals: Finish ⎯ Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
• Weight: 0.027 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMC31D5UDJ-7 SOT963 10K/Tape & Reel
DMC31D5UDJ-7B SOT963 10K/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. The options -7 and -7B stand for different taping orientations.
Marking Information
U1 = Product Type Marking Code
ESD PROTECTED
Top View
SOT963
Top View
Schematic and
Transistor Diagram
S
2
D
2
D
1
S
1
G
2
G
1
e3
U1
DMC31D5UDJ
Document number: DS36799 Rev. 2 - 2
2 of 9
www.diodes.com
June 2014
© Diodes Incorporated
DMC31D5UDJ
NEW PRODUCT
ADVANCE INFORMATION
ADVANCE INFORMATION
NEW PRODUCT
NEW PRODUCT
Maximum Ratings Q1 N-CHANNEL (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±12 V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
220
160
mA
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
200 mA
Pulsed Drain Current (Note 6)
I
DM
600 mA
Maximum Ratings Q2 P-CHANNEL (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Units
Drain-Source Voltage
V
DSS
-30 V
Gate-Source Voltage
V
GSS
±12 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-200
-140
mA
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
-200 mA
Pulsed Drain Current (Note 6)
I
DM
-600 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Units
Total Power Dissipation (Note 5)
P
D
350 mW
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
JA
361 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics Q1 N-CHANNEL (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30 — — V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current @T
C
= +25°C I
DSS
— — 100 nA
V
DS
= 24V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — ±10 µA
V
GS
= ±10V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.4 — 1.0 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS(ON)
— 0.9 1.5
V
GS
= 4.5V, I
D
= 100mA
— 1.0 2.0
V
GS
= 2.5V, I
D
= 50mA
— 1.2 3.0
V
GS
= 1.8V, I
D
= 20mA
— 1.4 4.5
V
GS
= 1.5V, I
D
= 10mA
— 2.3 —
V
GS
= 1.2V, I
D
= 1mA
Diode Forward Voltage
V
SD
— 0.6 1.0 V
V
GS
= 0V, I
S
= 10mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 22.6 — pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 2.68 — pF
Reverse Transfer Capacitance
C
rss
— 1.8 — pF
Total Gate Charge
Q
g
— 0.38 — nC
V
GS
= 4.5V, V
DS
= 15V,
I
D
= 200mA
Gate-Source Charge
Q
gs
— 0.05 — nC
Gate-Drain Charge
Q
gd
— 0.07 — nC
Turn-On Delay Time
t
D(on)
— 3.2 — ns
V
DD
= 15V, V
GS
= 4.5V,
R
G
= 2, I
D
= 200mA
Turn-On Rise Time
t
r
— 2.2 — ns
Turn-Off Delay Time
t
D(off)
— 21 — ns
Turn-Off Fall Time
t
f
— 7.5 — ns
DMC31D5UDJ
Document number: DS36799 Rev. 2 - 2
3 of 9
www.diodes.com
June 2014
© Diodes Incorporated
DMC31D5UDJ
NEW PRODUCT
ADVANCE INFORMATION
ADVANCE INFORMATION
NEW PRODUCT
NEW PRODUCT
Electrical Characteristics Q2 P-CHANNEL (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30 — — V
V
GS
= 0V, I
D
= -250A
Zero Gate Voltage Drain Current @T
C
= +25°C I
DSS
— — 100 nA
V
DS
= -24V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — ±10 µA
V
GS
= ±10V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.4 — -1.0 V
V
DS
= V
GS
, I
D
= -250A
Static Drain-Source On-Resistance
R
DS(ON)
— 2.0 5
V
GS
= -4.5V, I
D
= -100mA
— 2.5 6
V
GS
= -2.5V, I
D
= -50mA
— 3.0 7
V
GS
= -1.8V, I
D
= -20mA
— 3.4 10
V
GS
= -1.5V, I
D
= -10mA
— 5.1 —
V
GS
= -1.2V, I
D
= -1mA
Diode Forward Voltage
V
SD
— -0.6 -1.0 V
V
GS
= 0V, I
S
= -10mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 21.8 — pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 2.82 — pF
Reverse Transfer Capacitance
C
rss
— 1.66 — pF
Total Gate Charge
Q
g
— 0.35 — nC
V
GS
= -4.5V, V
DS
=- 15V,
I
D
= -200mA
Gate-Source Charge
Q
gs
— 0.05 — nC
Gate-Drain Charge
Q
gd
— 0.10 — nC
Turn-On Delay Time
t
D(on)
— 3.5 — ns
V
DD
= -15V, V
GS
= -4.5V,
R
G
= 2, I
D
= -200mA
Turn-On Rise Time
t
r
— 5.2 — ns
Turn-Off Delay Time
t
D(off)
— 18.8 — ns
Turn-Off Fall Time
t
f
— 8.7 — ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
P1-P3P4-P6P7-P9

DMC31D5UDJ-7

Mfr. #:
Buy DMC31D5UDJ-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 30V N & P Enh FET Low RDSon 22.2pF
Lifecycle:
New from this manufacturer.
Delivery:
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