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DMC31D5UDJ-7

P1-P3P4-P6P7-P9
DMC31D5UDJ
Document number: DS36799 Rev. 2 - 2
4 of 9
www.diodes.com
June 2014
© Diodes Incorporated
DMC31D5UDJ
NEW PRODUCT
ADVANCE INFORMATION
ADVANCE INFORMATION
NEW PRODUCT
NEW PRODUCT
N-CHANNEL
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.5 1 1.5 2 2.5 3
V= 1.0V
GS
V= 2.5V
GS
V= 4.5V
GS
V= 2.0V
GS
V= 1.2V
GS
V= 1.5V
GS
V= 3.0V
GS
V= 4.0V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I, D
R
AI
N
C
U
R
R
E
N
T (A)
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.5 1 1.5 2 2.5 3
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0
0.5
1
1.5
2
2.5
3
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V= 1.8V
GS
V = 2.5V
GS
V = 1.5V
GS
V = 4.5V
GS
I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0
0.5
1
1.5
2
2.5
3
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
-50 -25 0 25 50 75 100 125 150
T, JUNCTION TEMPERATURE (C)
Figure 5 On-Resistance Variation with Temperature
J
°
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0.6
0.8
1
1.2
1.4
1.6
1.8
V= V
I= 100mA
GS
D
2.5
V= V
I = 300mA
GS
D
4.5
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
°
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0
0.5
1
1.5
2
2.5
3
V=.5V
I = 100mA
GS
D
2
V= V
I = 300mA
GS
D
4.5
DMC31D5UDJ
Document number: DS36799 Rev. 2 - 2
5 of 9
www.diodes.com
June 2014
© Diodes Incorporated
DMC31D5UDJ
NEW PRODUCT
ADVANCE INFORMATION
ADVANCE INFORMATION
NEW PRODUCT
NEW PRODUCT
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
0.4
0.5
0.6
0.7
0.8
0.9
1
I= 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.3 0.6 0.9 1.2 1.5
T = 150°C
A
T = 125°C
A
T= 85°C
A
T = -55°C
A
T= 25°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (pF)
T
1
10
100
0 5 10 15 20 25 30
C
iss
f = 1MHz
C
oss
C
rss
Q(nC)
g
, TOTAL GATE CHARGE
Figure 10 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS
0
2
4
6
8
10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V = 15V
I= A
DS
D
200m
DMC31D5UDJ
Document number: DS36799 Rev. 2 - 2
6 of 9
www.diodes.com
June 2014
© Diodes Incorporated
DMC31D5UDJ
NEW PRODUCT
ADVANCE INFORMATION
ADVANCE INFORMATION
NEW PRODUCT
NEW PRODUCT
P-CHANNEL
-V , DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
012345
V= -1.2V
GS
V= -1.5V
GS
V= -4.5V
GS
V= -4.0V
GS
V= -1.0V
GS
V= -2.0V
GS
V= -2.5V
GS
V= -3.0V
GS
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.5 1 1.5 2 2.5 3
T = 150C
A
°
T = 85C
A
°
T = 25C
A
°
T = -55C
A
°
V = -5.0V
DS
T = 125C
A
°
-I , DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V = -1.5V
GS
V = -1.8V
GS
V = -2.5V
GS
V = -4.5V
GS
-I , DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0
1
2
3
4
5
6
7
8
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
T = -55C
A
°
T = 25C
A
°
T = 85C
A
°
T = 125C
A
°
T = 150C
A
°
V = -4.5V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 5 On-Resistance Variation with Temperature
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0.6
0.8
1
1.2
1.4
1.6
1.8
V = -4.5V
I = -300mA
GS
D
V = -2.5V
I = -100mA
GS
D
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 6 On-Resistance Variation with Temperature
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(on)
Ω
0
1
2
3
4
5
6
V= -4.5V
I= A
GS
D
-300m
V= V
I= A
GS
D
-2.5
-100m
P1-P3P4-P6P7-P9

DMC31D5UDJ-7

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Buy DMC31D5UDJ-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 30V N & P Enh FET Low RDSon 22.2pF
Lifecycle:
New from this manufacturer.
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