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NCV8402ASTT1G

P1-P3P4-P6P7-P9P10-P12P13-P13
© Semiconductor Components Industries, LLC, 2016
November, 2016 − Rev. 21
1 Publication Order Number:
NCV8402/D
NCV8402, NCV8402A
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8402/A is a three terminal protected Low−Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain−to−Gate clamping for overvoltage
protection. This device offers protection and is suitable for harsh
automotive environments.
Features
• Short−Circuit Protection
• Thermal Shutdown with Automatic Restart
• Overvoltage Protection
• Integrated Clamp for Inductive Switching
• ESD Protection
• NCV8402AMNWT1G − Wettable Flanks Product
• dV/dt Robustness
• Analog Drive Capability (Logic Level Input)
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
Drain
Source
Temperature
Limit
Gate
Input
Current
Limit
Current
Sense
Overvoltage
Protection
ESD Protection
www.onsemi.com
*Max current limit value is dependent on input
condition.
SOT−223
CASE 318E
STYLE 3
MARKING DIAGRAMS
V
(BR)DSS
(Clamped)
R
DS(ON)
TYP
I
D
MAX
42 V
165 mW @ 10 V
2.0 A*
A = Assembly Location
Y = Year
W or WW = Work Week
xxxxx = V8402 or 8402A
G = Pb−Free Package
1
(Note: Microdot may be in either location)
1
AYW
xxxxx G
G
23
4
GATE
DRAIN
SOURCE
DRAIN
2
3
4
DFN6
CASE 506AX
xxxxx
AYWW
G
1
See detailed ordering and shipping information on page 11 o
f
this data sheet.
ORDERING INFORMATION
DFN6 PACKAGE PIN DESCRIPTION
*Pins 4, 5, 6 are internally shorted together.
It is recommended to short these pins externally.
GNCNC
7
EPAD
SSS
123
654
Pin # Symbol Description
1 G Gate Input
2 NC No Connect
3 NC No Connect
4 S* Source
5 S* Source
6 S* Source
7 EPAD Drain
1
1
DFN6 (WF)
CASE 506DK
xxxxx
AYWW
G
1
NCV8402, NCV8402A
www.onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage Internally Clamped V
DSS
42 V
Drain−to−Gate Voltage Internally Clamped (R
G
= 1.0 MW)
V
DGR
42 V
Gate−to−Source Voltage V
GS
"14 V
Continuous Drain Current I
D
Internally Limited
Total Power Dissipation − SOT−223 Version @ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
@ T
S
= 25°C)
P
D
1.1
1.7
8.9
W
Total Power Dissipation − DFN Version @ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
@ T
S
= 25°C)
P
D
0.76
1.7
8.9
W
Maximum Continuous Drain Current − SOT−223 Version @ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
@ T
S
= 25°C)
I
D
2.37
2.98
6.75
A
Maximum Continuous Drain Current − DFN Version @ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
@ T
S
= 25°C)
I
D
1.98
3.02
6.75
A
Thermal Resistance SOT223 Junction−to−Ambient Steady State (Note 1)
SOT223 Junction−to−Ambient Steady State (Note 2)
SOT223 Junction−to−Soldering Point Steady State
DFN Junction−to−Ambient Steady State (Note 1)
DFN Junction−to−Ambient Steady State (Note 2)
DFN Junction−to−Soldering Point Steady State
R
q
JA
R
q
JA
R
q
JS
R
q
JA
R
q
JA
R
q
JS
114
72
14
163
70
14
°C/W
Single Pulse Drain−to−Source Avalanche Energy
(V
DD
= 32 V, V
G
= 5.0 V, I
PK
= 1.0 A, L = 300 mH, R
G(ext)
= 25 W)
E
AS
150 mJ
Load Dump Voltage (V
GS
= 0 and 10 V, R
I
= 2.0 W, R
L
= 9.0 W, t
d
= 400 ms)
V
LD
55 V
Operating Junction Temperature T
J
−40 to 150 °C
Storage Temperature T
stg
−55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).
2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick).
DRAIN
SOURCE
GATE
VDS
VGS
I
D
I
G
+
−
+
−
Figure 1. Voltage and Current Convention
NCV8402, NCV8402A
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Test Condition Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(Note 3)
V
GS
= 0 V, I
D
= 10 mA, T
J
= 25°C
V
(BR)DSS
42 46 55
V
V
GS
= 0 V, I
D
= 10 mA, T
J
= 150°C
(Note 5)
40 45 55
Zero Gate Voltage Drain Current V
GS
= 0 V, V
DS
= 32 V, T
J
= 25°C I
DSS
0.25 4.0
mA
Zero Gate Voltage Drain Current V
GS
= 0 V, V
DS
= 32 V, T
J
= 150°C
(Note 5)
I
DSS
1.1 20
mA
Gate Input Current V
DS
= 0 V, V
GS
= 5.0 V I
GSSF
50 100
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 150 mA
V
GS(th)
1.3 1.8 2.2 V
Gate Threshold Temperature Coefficient V
GS(th)
/T
J
4.0 −mV/°C
Static Drain−to−Source On−Resistance
V
GS
= 10 V, I
D
= 1.7 A, T
J
= 25°C
R
DS(on)
165 200 mW
V
GS
= 10 V, I
D
= 1.7 A, T
J
= 150°C
(Note 5)
305 400
V
GS
= 5.0 V, I
D
= 1.7 A, T
J
= 25°C
195 230
V
GS
= 5.0 V, I
D
= 1.7 A, T
J
= 150°C
(Note 5)
360 460
V
GS
= 5.0 V, I
D
= 0.5 A, T
J
= 25°C
190 230
V
GS
= 5.0 V, I
D
= 0.5 A, T
J
= 150°C
(Note 5)
350 460
Source−Drain Forward On Voltage V
GS
= 0 V, I
S
= 7.0 A V
SD
1.0 V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time (10% V
IN
to 90%
I
D
)
V
GS
= 10 V, V
DD
= 12 V,
I
D
= 2.5 A, R
L
= 4.7 W
td
(on)
25 30
ms
Turn−On Rise Time (10% I
D
to 90% I
D
) t
rise
120 200
ms
Turn−Off Delay Time (90% V
IN
to 10%
I
D
)
td
(off)
20 25
ms
Turn−Off Fall Time (90% I
D
to 10% I
D
) t
fall
50 70
ms
Slew−Rate ON (70% to 50% V
DD
) −dV
DS
/dt
ON
0.8 1.2
V/ms
Slew−Rate OFF (50% to 70% V
DD
) dV
DS
/dt
OFF
0.3 0.5
V/ms
SELF PROTECTION CHARACTERISTICS (T
J
= 25°C unless otherwise noted) (Note 4)
Current Limit
V
DS
= 10 V, V
GS
= 5.0 V, T
J
= 25°C
I
LIM
3.7 4.3 5.0
A
V
DS
= 10 V, V
GS
= 5.0 V, T
J
= 150°C
(Note 5)
2.3 3.0 3.7
V
DS
= 10 V, V
GS
= 10 V, T
J
= 25°C
4.2 4.8 5.4
V
DS
= 10 V, V
GS
= 10 V, T
J
= 150°C
(Note 5)
2.7 3.6 4.5
Temperature Limit (Turn−off)
V
GS
= 5.0 V (Note 5)
T
LIM(off)
150 175 200
°C
Thermal Hysteresis
V
GS
= 5.0 V
DT
LIM(on)
15
Temperature Limit (Turn−off)
V
GS
= 10 V (Note 5)
T
LIM(off)
150 165 185
Thermal Hysteresis
V
GS
= 10 V
DT
LIM(on)
15
GATE INPUT CHARACTERISTICS (Note 5)
Device ON Gate Input Current
V
GS
= 5 V I
D
= 1.0 A
I
GON
50 mA
V
GS
= 10 V I
D
= 1.0 A
400
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.
P1-P3P4-P6P7-P9P10-P12P13-P13

NCV8402ASTT1G

Mfr. #:
Buy NCV8402ASTT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 42V 2.0A
Lifecycle:
New from this manufacturer.
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