IXGT32N120A3 Datasheet IXGT32N120A3, IXGH32N120A3 | P1-P3

DS99608C(03/11)

IXGH32N120A3

IXGT32N120A3

GenX3

TM

1200V

IGBTs

Ultra-Low Vsat PT IGBTs for

up to 3 kHz Switching

Features

z

Optimized for Low Conduction Losses

z

International Standard Packages

Advantages

z

High Power Density

z

Low Gate Drive Requirement

Applications

z

Power Inverters

z

Capacitor Discharge

z

UPS

z

Motor Drives

z

SMPS

z

PFC Circuits

z

Battery Chargers

z

Welding Machines

z

Lamp Ballasts

z

Inrush Current Protection Circuits

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 1200 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1MΩ 1200 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C 75 A

I

C110

T

C

= 110°C 32 A

I

CM

T

C

= 25°C, 1ms 230 A

I

A

T

C

= 25°C 20 A

E

AS

T

C

= 25°C 120 mJ

SSOA V

GE

= 15V, T

J

= 125°C, R

G

= 20Ω I

CM

= 150 A

(RBSOA) Clamped Inductive Load V

CE

≤≤

≤ 0.8 • V

CES

P

C

T

C

= 25°C 300 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.063in) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10s 260 °C

M

d

Mounting Torque (TO-247) 1.13/10 Nm/lb.in.

Weight TO-247 6.0 g

TO-268 4.0 g

V

CES

= 1200V

I

C110

= 32A

V

CE(sat)

≤≤

≤ 2.35V

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 1200 V

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= V

CES

, V

GE

= 0V 50 μA

T

J

= 125°C 1 mA

I

GES

V

CE

= 0V, V

GE

= ±20V ±100 nA

V

CE(sat)

I

C

= I

C110

,

V

GE

= 15V, Note 1 2.35 V

I

C

= 400A,

V

GE

= 30V, Note 1 11 V

G = Gate C = Collector

E = Emitter Tab = Collector

TO-247 (IXGH)

G

E

C (Tab)

C

TO-268 (IXGT)

E

G

C (Tab)

IXGH32N120A3

IXGT32N120A3

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

TO-247 AD Outline

TO-268 Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

Terminals: 1 - Gate 2 - Collector

3 - Emitter

1 2 3

Terminals: 1 - Gate 2, 4 - Collector

3 - Emitter

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 50A, V

CE

= 10V, Note 1 14 20 S

I

C(on)

V

CE

= 10V, V

GE

= 15V, Note 1 94 A

C

ies

2150 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 130 pF

C

res

14 pF

Q

g

89 nC

Q

ge

I

C

= 50A, V

GE

= 15V, V

CE

= 0.5 • V

CES

15 nC

Q

gc

34 nC

t

d(on)

39 ns

t

r

200 ns

t

d(off)

140 ns

t

f

1240 ns

R

thJC

0.42 °C/W

R

thCK

TO-247 0.21 °C/W

Resistive Switching Times, T

J

= 25°C

V

GE

= 20V, V

CE

= 0.8 • V

CES

, I

C

= 100A

R

G

= 10Ω (External)

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

140

160

180

200

0123456

V

CE

- Volts

I

C

- Amperes

V

GE

= 30V

25V

20V

10V

15V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

25

50

75

100

125

150

175

200

225

250

0 5 10 15 20

V

CE

- Volts

I

C

-

Amperes

V

GE

= 30V

25V

20V

15V

10V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

20

40

60

80

100

120

140

160

180

200

01234567

V

CE

- Volts

I

C

- Amperes

V

GE

= 30V

25V

20V

15V

10V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0

1

2

3

4

5

6

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 192A

I

C

= 96A

I

C

= 32A

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

1

2

3

4

5

6

7

8

9

10

6 8 10 12 14 16 18 20 22 24 26 28 30

V

GE

- Volts

V

CE

- Volts

I

C

= 150A

T

J

= 25ºC

100A

50A

Fig. 6. Input Admittance

0

10

20

30

40

50

60

70

80

90

100

34567891011

V

GE

- Volts

I

C

-

Amperes

T

J

= - 40ºC

25ºC

125ºC

IXGH32N120A3

IXGT32N120A3

IXGT32N120A3

IXGT32N120A3

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