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IXGT32N120A3

P1-P3P4-P6
IXGH32N120A3
IXGT32N120A3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Transconductance
0
4
8
12
16
20
24
0 102030405060708090100
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 12. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
Fig. 8. Dependence of BV
CES
& V
(th)GE
on
Junction Temperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
(th)GE
- Normalized
0.91
0.94
0.97
1.00
1.03
1.06
1.09
1.12
1.15
1.18
BV
CES
- Normalized
V
(th)GE
BV
CES
Fig. 9. Single-Pulsed Avalanche Energy
vs. Junction Temperature
20
40
60
80
100
120
140
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
as
- MilliJoules
I
C
= 20A
V
GE
= 15V
Fig. 10. Resistive Turn-on Rise Time
vs. Gate Voltage
100
300
500
700
900
1100
1300
8 1012141618202224262830
V
GE
- Volts
t
r
- Nanoseconds
R
G
= 10
,
I
C
= 100A
V
CE
= 960V
T
J
= 125ºC
T
J
= 25ºC
Fig. 11. Gate Charge
0
2
4
6
8
10
12
14
16
0 102030405060708090
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 50A
I
G
= 10mA
© 2011 IXYS CORPORATION, All rights Reserved
Fig. 18. Resistive Turn-off Switching Times
vs. Collector Current
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
50 60 70 80 90 100 110 120 130 140 150
I
C
- Amperes
t
f
- Nanoseconds
110
120
130
140
150
160
170
180
190
200
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10, V
GE
= 20V
V
CE
= 960V
T
J
= 125ºC
T
J
= 25ºC
Fig. 16. Resistive Turn-off Switching Times
vs. Gate Resistance
1890
1900
1910
1920
1930
1940
1950
1960
1970
1980
10 15 20 25 30 35 40 45 50
R
G
- Ohms
t
f
- Nanoseconds
50
100
150
200
250
300
350
400
450
500
t
d(off)
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 125ºC, V
GE
= 20V
V
CE
= 960V
I
C
= 100A
I
C
= 50A, 100A, 150A
Fig. 13. Resistive Turn-on Switching Times
vs. Gate Resistance
220
240
260
280
300
320
340
360
380
400
420
10 14 18 22 26 30 34 38 42 46 50
R
G
- Ohms
t
r
- Nanoseconds
37
40
43
46
49
52
55
58
61
64
67
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 20V
V
CE
= 960V
I
C
= 100A
I
C
= 50A
I
C
= 150A
Fig. 17. Resistive Turn-off Switching Times
vs. Junction Temperature
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
110
120
130
140
150
160
170
180
190
200
t
d
(
off
)
-
Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10, V
GE
= 20V
V
CE
= 960V
I
C
= 150A, 100A, 50A
Fig. 15. Resistive Turn-on Rise Time
vs. Collector Current
160
180
200
220
240
260
280
300
320
60 65 70 75 80 85 90 95 100 105 110 115 120
I
C
- Amperes
t
r
- Nanoseconds
R
G
= 10
,
V
GE
= 20V
V
CE
= 960V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Resistive Turn-on Rise Time
vs. Junction Temperature
160
180
200
220
240
260
280
300
320
340
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 10, V
GE
= 20V
V
CE
= 960V
I
C
= 150A
I
C
= 50A
I
C
= 100A
IXGH32N120A3
IXGT32N120A3
IXGH32N120A3
IXGT32N120A3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 20. Maximum Transient Thermal Impedance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 19. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
140
160
200 300 400 500 600 700 800 900 1000 1100 1200
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 20
dv / dt < 10V / ns
IXYS REF: IXG_32N120A3(4A)03-04-11-A
P1-P3P4-P6

IXGT32N120A3

Mfr. #:
Buy IXGT32N120A3
Manufacturer:
Littelfuse
Description:
IGBT Modules GenX3 1200V IGBTs
Lifecycle:
New from this manufacturer.
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