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PD85006-E

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
August 2010 Doc ID 16208 Rev 3 1/17
17
PD85006-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ Broadband performances:
P
OUT
= 6 W with 15 dB gain @ 870 MHz/13.6 V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC european
directive
Description
The PD85006-E is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 13.6 V in common source mode at
frequencies of up to 1 GHz. PD85006-E boasts
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package.
PowerSO-10RF’s superior linearity performance
makes it an ideal solution for mobile radio
applications.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performance and ease of assembly.
Mounting recommendations are available in
www.st.com/rf (search for AN1294).
Figure 1. Pin connections
PowerSO-10RF
(formed lead)
Gate
Source
Drain
Table 1. Device summary
Order codes Packages Packaging
PD85006-E PowerSO-10RF (formed lead) Tube
PD85006TR-E PowerSO-10RF (formed lead) Tape and reel
www.st.com
Contents PD85006-E
2/17 Doc ID 16208 Rev 3
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.3 ESD protection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Impedances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 DC curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 RF curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6 Schematic and bill of material . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
PD85006-E Electrical data
Doc ID 16208 Rev 3 3/17
1 Electrical data
1.1 Maximum ratings
1.2 Thermal data
Table 2. Absolute maximum ratings (T
CASE
= 25 °C)
Symbol Parameter Value Unit
V
(BR)DSS
Drain-source voltage 40 V
V
GS
Gate-source voltage -0.5 to +15 V
I
D
Drain current 2 A
P
DISS
Power dissipation (@ T
C
= 70 °C) 36.5 W
T
J
Max. operating junction temperature 165 °C
T
STG
Storage temperature -65 to +150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Junction - case thermal
resistance
2.6 °C/W
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

PD85006-E

Mfr. #:
Buy PD85006-E
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors RF Power Transistor LdmoST N-ch Plastic
Lifecycle:
New from this manufacturer.
Delivery:
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