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PD85006-E
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P17
Electrical ch
aracteristic
s
PD85006-E
4/17
Doc ID 16208 Rev 3
2 Electrical
characteristics
T
CASE
= +25 °C
2.1 Static
2.2 Dynamic
2.3 ESD
pr
otection
characteristics
T
abl
e 4.
Static
Symbol
T
est conditions
Min
T
yp
Max
Unit
I
DSS
V
GS
= 0V
V
DS
= 25 V
-
1µ
A
I
GSS
V
GS
= 5 V
V
DS
= 0 V
1
µA
V
GS(Q)
V
DS
= 13.6 V
I
D
= 200 mA
4
V
V
DS(ON)
V
GS
= 10 V
I
D
= 0.25 A
0.27
V
C
ISS
V
GS
= 0V
V
DS
= 13.6
V
f = 1 MHz
16
pF
C
OSS
V
GS
= 0V
V
DS
= 13.6
V
f = 1 MHz
14
pF
C
RSS
V
GS
= 0V
V
DS
= 13.6 V
f = 1 MHz
1.1
pF
T
able 5.
Dynamic
Symbol
T
est conditions
Min
T
yp
Max
Unit
P
OUT
V
DD
= 13.6 V
, I
DQ
= 200 mA, P
IN
= 0.1 W
, f = 870 MHz
5
6
-
W
G
P
V
DD
= 13.6 V
, I
DQ
= 200 mA, P
OUT
= 5 W
, f = 870 MHz
15
17
dB
h
D
V
DD
= 13.6 V
, I
DQ
= 200 mA, P
OUT
= 5 W
, f = 870 MHz
55
63
%
Load
mismatch
V
DD
= 13.6 V
, I
DQ
= 200 mA, P
OUT
= 5 W
, f = 870 MHz
All phase angles
20:1
VSW
R
T
abl
e 6.
ESD protec
tion charac
teristics
T
est conditions
Class
Human body model
2
Machine model
M3
PD85006-E
Impedances
Doc ID 16208 Rev
3
5/17
3 Impedances
Figure 2.
Impedances
T
able 7.
Broadb
and impedances
F(MHz)
Z
GS
Z
DL
860
2.66+ j 4.28
6.23+ j 5.71
8
8
0
2.81+ j 4.35
6.46+ j 6.20
90
0
2.88+ j 4.34
6.73 + j 6.66
92
0
2.87+ j 4.25
7.06+ j 7.06
9
4
0
2.68+ j 4.20
7.40+ j 7.45
9
6
0
2.39+ j 4.20
7.80+ j 7.75
DC curves
PD85006-E
6/17
Doc ID 16208 Rev 3
4 DC
curves
Figure 3.
Output po
wer and efficiency vs.
frequency
13.6 V / 200
mA / Pin = 21
dBm
Figure 4.
Gain vs. fre
quency 13.6 V / 200
mA
Figure 5.
Input return loss
vs. frequency
13.6 V / 200 mA
Figure 6.
Gain vs. pout 13.6 V / 200 mA
Figure 7.
Id vs. pin 13.6 V / 200 mA
Figure 8.
P
out vs. pin 13.6 V / 200 mA
0
1
2
3
4
5
6
7
8
860
880
900
920
940
960
Frequency (MHz)
Pout
(W)
0
10
20
30
40
50
60
70
80
Efficiency (%)
Pout
Eff
12
13
14
15
16
17
18
19
20
860
880
900
920
940
960
Freque
ncy (MHz
)
Gain (dB)
Pin=21 dBm
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
820
840
860
880
900
920
940
960
980
1000
Freque
ncy (MH
z)
IRL (d
B)
Pin=21 dBm
11
12
13
14
15
16
17
18
19
20
21
22
1234567
Pout (W)
Gain (dB)
860 MHz
900 MHz
960
MHz
0.2
0.3
0.4
0.5
0.6
0.7
0.8
12
13
14
15
16
17
18
19
20
21
22
23
24
25
Pin(dBm)
Id(A)
860 MHz
900 MHz
960 MHz
30
31
32
33
34
35
36
37
38
39
12
13
14
15
16
17
18
19
20
21
22
23
24
25
Pin (dBm)
Pout (dBm)
860 MHz
900 MHz
960 MHz
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P17
PD85006-E
Mfr. #:
Buy PD85006-E
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors RF Power Transistor LdmoST N-ch Plastic
Lifecycle:
New from this manufacturer.
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