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MMENDED F
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RF Device Data
Freescale Semiconductor, Inc.
MMG3002NT1
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3100: General Purpose Amplifier and MMIC Biasing
Software
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to Software &
Tools on the part’s Product Summary page to download the respective tool.
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
7 Mar. 2007 Corrected and updated Part Numbers in Tables 8, 10 and 11, Component Designations and Values, to
RoHS compliant part numbers, pp. 6--8
8 July 2007 Replaced Case Outline 1514--01 with 1514--02, Issue D, pp. 1, 12--14. Case updated to add missing
dimension for Pin 1 and Pin 3.
9 Mar. 2008 Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings,
p. 1
Corrected Fig. 13, Single-- Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power y-- a x i s
(ACPR) unit of measure to dBc, p. 5
Corrected S--Parameter table frequency column label to read “MHz” versus “GHz” and corrected
frequency values from GHz to MHz, pp. 9, 10
10 Feb. 2012 Corrected temperature at which ThetaJC is measured from 25Cto118C and added “no RF applied” to
Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no
RF signal applied, p. 1
Table 6, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 3
Removed I
CC
bias callout from applicable graphs and Table 12, Common Emitter S--Parameters heading
as bias is not a controlled value, pp. 4–10
Added .s2p File availability to Product Software, p. 15
11 Dec. 2012 Replaced the PCB Pad Layout drawing, the package isometric and mechanical outline for Case 1514--02
(SOT--89) with Case 2142 --01 (SOT--89) as a result of the device transfer from a Freescale wafer fab to an
external GaAs wafer fab and new assembly site. The new assembly and test site’s SOT--89 package has
slight dimensional differences, pp. 1, 11--14. Refer to PCN13337, GaAs Fab Transfer.
Added Fig. 24, Product Marking, p. 11
12 Sept. 2014 Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test
results of the device, p. 1
Added Failure Analysis information, p. 14