N
TRE
MMENDED F
RNEWDE
I
N
NOT RECOMMENDED FOR NEW DESIGN
4
RF Device Data
Freescale Semiconductor, Inc.
MMG3002NT1
50 OHM TYPICAL CHARACTERISTICS
27
42
5
V
CC
, COLLECTOR VOLTAGE (V)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
39
36
33
30
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
5.1 5.2 5.45.3
f = 900 MHz
100 kHz Tone Spacing
100-- 4 0 -- 2 0 0 2 0 4 0 6 0 8 0
35
41
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
40
39
38
37
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
36
Figure 10. Third Order Intermodulation Distortion
versus Output Power
P
out
, OUTPUT POWER (dBm)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
215791113
-- 8 0
-- 3 0
-- 5 0
-- 6 0
-- 7 0
V
CC
=5.2Vdc
f = 900 MHz
100 kHz Tone Spacing
-- 4 0
15
150
10
2
10
5
120
Figure 11. MTTF versus Junction Temperature
10
3
125 130 135 140 145
T
J
, JUNCTION TEMPERATURE (C)
NOTE: The MTTF is calculated with V
CC
=5.2Vdc,I
CC
=110mA
MTTF (YEARS)
4
0
8
0
f, FREQUENCY (GHz)
Figure 12. Noise Figure versus Frequency
6
4
2
123
NF, NOISE FIGURE (dB)
0.5 1.5 2.5 3.5
19
-- 7 0
-- 2 0
9
P
out
, OUTPUT POWER (dBm)
Figure 13. Single--Carrier W--CDMA Adjacent
Channel Power Ratio versus Output Power
-- 3 0
-- 4 0
-- 5 0
-- 6 0
17151311
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
V
CC
=5.2Vdc,
f = 900 MHz
100 kHz Tone Spacing
8 Vdc Supply with 25 Ω Dropping Resistor
17 19
10
4
V
CC
=5.2Vdc
V
CC
= 5.2 Vdc, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability(CCDF)
