Characteristics STTH10LCD06C
2/10 Doc ID 15897 Rev 3
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 1.2 x I
F(AV)
+ 0.08 x I
F
2
(RMS)
Table 2. Absolute ratings
(1)
1. Limiting values per diode at 25 °C, unless otherwise specified
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 600 V
I
F(RMS)
Forward current rms 20 A
I
F(AV)
Average forward
current, δ = 0.5
T
c
= 130 °C
TO-220AB,
D
2
PA K
Per diode 5 A
Per device 10 A
T
c
= 100 °C TO-220FPAB
Per diode 5 A
Per device 10 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 60 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(2)
2. condition to avoid thermal runaway for a diode on its own heatsink
175 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case(per diode)
TO-220AB, D
2
PA K 4. 5
°C/W
TO-220FPAB 7.5
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2 %
Reverse leakage
current
T
j
= 25 °C
V
R
= V
RRM
1
µA
T
j
= 150 °C 5 50
V
F
(2)
2. Pulse test: t
p
= 380 µs, δ < 2 %
Forward voltage drop
T
j
= 25 °C
I
F
= 5 A
2
V
T
j
= 150 °C 1.25 1.6
T
j
= 25 °C
I
F
= 10 A
2.35
T
j
= 150 °C 1.55 2
dPtot
dTj
<
1
Rth(j-a)
