Characteristics STTH10LCD06C
4/10 Doc ID 15897 Rev 3
Figure 5. Peak reverse recovery current
versus dI
F
/dt
(typical values, per diode)
Figure 6. Reverse recovery time versus
dI
F
/dt (typical values, per diode)
0
1
2
3
4
5
6
7
8
9
10
0 50 100 150 200 250 300 350 400 450 500
I
F
= I
F(AV)
V
R
= 400 V
T
j
= 125 °C
I
RM
(A)
dI
F
/dt (A/µs)
0
20
40
60
80
100
120
140
160
180
200
0 50 100 150 200 250 300 350 400 450 500
I
F
= I
F(AV)
V
R
= 400 V
T
j
= 125 °C
t
RR
(ns)
dI
F
/dt (A/µs)
Figure 7. Reverse recovery charges versus
dI
F
/dt (typical values, per diode)
Figure 8. Reverse recovery softness factor
versus dI
F
/dt
(typical values, per diode)
0
50
100
150
200
250
300
350
0 50 100 150 200 250 300 350 400 450 500
I
F
= I
F(AV)
V
R
= 400 V
T
j
= 125 °C
dI
F
/dt (A/µs)
Q
RR
(nC)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 50 100 150 200 250 300 350 400 450 500
I
F
= I
F(AV)
V
R
= 400 V
T
j
= 125 °C
S
FACTO R
dI
F
/dt (A/µs)
Figure 9. Relative variations of dynamic
parameters versus junction
temperature
Figure 10. Transient peak forward voltage
versus dI
F
/dt
(typical values, per diode)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
25 50 75 100 125
T
j
(°C)
I
F
= I
F(AV)
V
R
= 400 V
Refernce T
j
= 125 °C
I
RM
Q
RR
S
FACTOR
0
2
4
6
8
10
12
14
16
18
0 50 100 150 200 250 300 350 400 450 500
I
F
= I
F(AV)
T
j
= 125 °C
dI
F
/dt (A/µs)
V
FP
(V)
